Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

2015 ◽  
Vol 212 (10) ◽  
pp. 2233-2238 ◽  
Author(s):  
Wanwu Guo ◽  
Liping Zhang ◽  
Fanying Meng ◽  
Jian Bao ◽  
Dongliang Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Heterojunction Solar Cells ◽  
Hydrogenated Amorphous ◽  
Silicon Surface Passivation

scholarly journals High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

2011 ◽  
Vol 99 (20) ◽  
pp. 203503 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Quality ◽  
Hydrogenated Amorphous ◽  
Silicon Surface Passivation

scholarly journals Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass -=SUP=-*-=/SUP=-

2019 ◽  
Vol 53 (8) ◽  
pp. 1140
Author(s):  
S.N. Abolmasov ◽  
A.S. Abramov ◽  
A.V. Semenov ◽  
I.S. Shakhray ◽  
E.I. Terukov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Total Reflection ◽  
Effective Lifetime ◽  
Heterojunction Solar Cells ◽  
Silicon Surface Passivation ◽  
Silicon Heterojunction Solar Cells

AbstractAttenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative studies show a strong link between microstructure factor R * and effective lifetime of amorphous silicon ( a -Si:H) passivation layers incorporating an interface buffer layer, which prevents the epitaxial growth. It is demonstrated that thin a -Si:H films deposited on glass can be used as ATR substrates in this case. The obtained results show that a -Si:H films with R * close to 0.1 are required for manufacturing of high-efficiency (>23%) silicon heterojunction solar cells.

Crystalline Silicon Surface Passivation by Pecv-Deposited Hydrogenated Amorphous Silicon Oxide Films [a-SiOx:H]

2007 ◽  
Vol 989 ◽  
Author(s):  
Thomas Mueller ◽  
Wolfgang Duengen ◽  
Reinhart Job ◽  
Maximilian Scherff ◽  
Wolfgang Fahrner
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Window Layer ◽  
Effective Lifetime ◽  
Si Solar Cells ◽  
Hydrogenated Amorphous

AbstractIn the research field of crystalline silicon (c-Si) solar cells, electronic surface passivation has been recognized as a crucial step to achieve high conversion efficiencies. The main issue of this article is to analyze the surface passivation properties of both, n-type and p-type crystalline silicon wafers by hydrogenated amorphous silicon sub oxide [a-SiOx:H] films the for use in hetero-junction (a-Si/c-Si) solar cells. A window layer is obtained with a certain fraction of oxygen in the a-SiOx:H layers.The a-SiOx:H films were deposited by decomposition of silane, carbon dioxide and hydrogen as source gases using plasma enhanced chemical vapor deposition (PECVD). Films with varying deposition parameters such as gas flow ratio (oxygen fraction) and plasma frequency (13.56, 70.0 and 110.0 MHz) are compared.To determine the passivation quality of the a-SiOx:H films, microwave-detected photo conductance decay (µ-PCD) provides a contactless measurement of the effective recombination lifetime of free carriers. The film compositions and also the changes in the microscopic structure of the amorphous network upon thermal annealing are studied using Raman spectroscopy and optical profiling techniques.The Raman spectra reveal the generation of Si-(OH)x and Si-O-Si bonds after thermal annealing in the layers, leading to a higher effective lifetime, as it reduces the defect absorption of the sub oxides.For n-type FZ material, lifetime values as high as 1650 µs are obtained, resulting in a surface recombination velocity Seff < 9.5 cm/s.

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