Analysis of low-temperature data of Hall-effect measurements on p-type InP using a small-polaron theory

2016 ◽  
Author(s):  
Yasutomo Kajikawa
Keyword(s):  
Low Temperature ◽  
Hall Effect ◽  
Small Polaron ◽  
Temperature Data ◽  
Polaron Theory ◽  
Hall Effect Measurements ◽  
P Type

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate

2013 ◽  
Vol 113 (16) ◽  
pp. 164508 ◽  
Author(s):  
R. Macaluso ◽  
M. Mosca ◽  
C. Calì ◽  
F. Di Franco ◽  
M. Santamaria ◽  
...  
Keyword(s):  
Hall Effect ◽  
Zno Films ◽  
Type Assignment ◽  
Inp Substrate ◽  
Hall Effect Measurements ◽  
P Type

Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 6034-6040 ◽  
Author(s):  
Hideharu Matsuura ◽  
Yoshitsugu Uchida ◽  
Tadashi Hisamatsu ◽  
Sumio Matsuda
Keyword(s):  
Hall Effect ◽  
Type Silicon ◽  
Hall Effect Measurements ◽  
P Type

scholarly journals Retraction: “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”

2016 ◽  
Vol 55 (11) ◽  
pp. 119201
Author(s):  
Masahiro Horita ◽  
Shinya Takashima ◽  
Ryo Tanaka ◽  
Hideaki Matsuyama ◽  
Katsunori Ueno ◽  
...  
Keyword(s):  
Hall Effect ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hall Effect Measurements ◽  
P Type

Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon

2012 ◽  
Vol 21 (7) ◽  
pp. 1469-1477 ◽  
Author(s):  
Chiara Modanese ◽  
Maurizio Acciarri ◽  
Simona Binetti ◽  
Anne-Karin Søiland ◽  
Marisa Di Sabatino ◽  
...  
Keyword(s):  
Hall Effect ◽  
Solar Grade Silicon ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
Grade Silicon ◽  
P Type

Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants

2005 ◽  
Vol 864 ◽  
Author(s):  
A.J. Smith ◽  
B. Colombeau ◽  
N. Bennett ◽  
R. Gwilliam ◽  
N. Cowern ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hall Effect ◽  
Areal Density ◽  
Junction Depth ◽  
Hall Effect Measurements ◽  
Temperature Activation ◽  
High Level

AbstractIn this study 300keV and 1MeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×1015cm-2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the 1MeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC

2004 ◽  
Vol 457-460 ◽  
pp. 677-680 ◽  
Author(s):  
L. Kasamakova-Kolaklieva ◽  
L. Storasta ◽  
Ivan G. Ivanov ◽  
Björn Magnusson ◽  
Sylvie Contreras ◽  
...  
Keyword(s):  
Hall Effect ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
P Type
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