Effect of arsenic cracking on In incorporation into MBE-grown InGaAs layer

2015 ◽  
Vol 12 (6) ◽  
pp. 524-527
Author(s):  
Hiromu Iha ◽  
Yujiro Hirota ◽  
Masatsugu Yamauchi ◽  
Nao Yamamoto ◽  
Takahiro Maruyama ◽  
...  
Keyword(s):  
Ingaas Layer

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

Optical Properties of InGaAs/InP Quantum Wires Defined by High Voltage Electron Beam Lithography at 200 kV

1992 ◽  
Vol 283 ◽  
Author(s):  
P. Ils ◽  
M. Michel ◽  
A. Forchel ◽  
I. Gyuro ◽  
P. Speier ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Quantum Wires ◽  
Optical Emission ◽  
Blue Shift ◽  
Ingaas Layer ◽  
Lithography Process ◽  
Voltage Electron ◽  
Side Walls ◽  
Wet Chemical

ABSTRACTWe have fabricated and analyzed high quality InGaAs/InP quantum wires by electron beam lithography and wet chemical etching. In order to optimize the shape of the wet-etched wires different wire orientations were investigated. As results of the lithography process we obtain wire masks with widths down to 15 nm and etched wires with widths of the InGaAs layer of 18 nm.The wires were studied optically by means of photoluminescence spectroscopy. In contrast to dry etched wire structures the wet chemically etched wires show strong optical emission even for geometrical widths less than 25 nm. The weak decrease of the quantum efficiency with decreasing wire width indicates that there are no dead layers at the side walls of the wires, which is in contrast to previous studies on dry-etched structures. The photoluminescence energy of the InGaAs/InP wires is independent of the wire dimension down to widths of 50 nm. This indicates that a steep lateral potential in our structures is obtained due to the confinement by the semiconductor/vacuum transition at the etched surfaces. For wires with smaller widths an increasing blue shift of photoluminescence energy up to more than 30 meV is observed.

Dislocation Distribution in Graded Composition IngaAs Layers

1993 ◽  
Vol 325 ◽  
Author(s):  
S.I. Molina ◽  
G. Gutiérrez ◽  
A. Sacedón ◽  
E. Calleja ◽  
R. García
Keyword(s):  
Detection Limit ◽  
Dislocation Density ◽  
Layer Thickness ◽  
Gaas Substrate ◽  
Ingaas Layer ◽  
Constant Composition ◽  
Defect Distribution ◽  
Dislocation Distribution

The defect distribution of a graded composition InGaAs layer grown on GaAs by MBE has been characterized by TEM (XTEM, PVTEM, HREM). The observed configuration does not correspond completely with that theoretically predicted. Dislocation misfit segments are in a quantity much bigger than in constant composition layers. Dislocation density is quite uniform up to a certain layer thickness t1. Few dislocations are observed between this t1 thickness and a larger thickness t2. Dislocation density is below the detection limit of XTEM for thicknesses bigger than t2. Some dislocations are observed to penetrate in the GaAs substrate.Several mechanisms (reactions between 600 dislocations, Hagen-Strunk and modified Frank-Read processes) are proposed to explain the interactions of dislocations in the epilayer and their penetration in the substrate.

scholarly journals SWIR Photosensory

2021 ◽  
Vol 9 (6) ◽  
pp. 479-498
Author(s):  
Konstantin Boltar ◽  
Igor Burlakov ◽  
Natalya Iakovleva ◽  
Alekcey Polessky ◽  
Peter Kuznetsov ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Spectral Range ◽  
Barrier Layer ◽  
Focal Plane ◽  
Two Dimensional ◽  
Pulse System ◽  
Ingaas Layer ◽  
Long Wavelength ◽  
And Performance ◽  
Gated Viewing System

In this paper, we report on the design, the fabrication, and performance of SWIR photomodules using sensitive two-dimensional arrays based on InGaAs-heterostructures. The de- sign of suggested InGaAs-heterostructure includes InAlAs wideband barrier layer and high sensitive absorber InGaAs layer which are increasing the uniformity and operability of focal plane array (FPA), so the number of defect elements are less than 0.5 %. The possibilities of spectral range expanding into short-wavelength to 0.5 μm and into long-wavelength to 2.2 μm regions have been considered. The operation principals of active-pulse system for 0.9–1.7 μm spectral range based on InGaAs 320256 FPA with 30 μm pitch have been presented. The investigations showed that the infrared gated-viewing system based on the InGaAs 320256 FPA provided a spatial resolution of 0,6 m.

Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth

1991 ◽  
Vol 115 (1-4) ◽  
pp. 174-179 ◽  
Author(s):  
Kiyoko Kato ◽  
Toshihiro Kusunoki ◽  
Chisato Takenaka ◽  
Toshiyuki Tanahashi ◽  
Kazuo Nakajima
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Ingaas Layer ◽  
Lateral Overgrowth

Effects of a thin InGaAs layer on carrier dynamics of InAs quantum dots

2010 ◽  
Vol 108 (9) ◽  
pp. 093521 ◽  
Author(s):  
Hi Jong Lee ◽  
Mee-Yi Ryu ◽  
Jin Soo Kim
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Ingaas Layer ◽  
Inas Quantum Dots

The thermal stability of ohmic contact to n-type InGaAs layer

1995 ◽  
Vol 24 (2) ◽  
pp. 79-82 ◽  
Author(s):  
J. W. Wu ◽  
C. Y. Chang ◽  
K. C. Lin ◽  
E. Y. Chang ◽  
J. S. Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ingaas Layer ◽  
Thermal Stability Of

Dynamics of Surface Segregation During InGaAs Mbe

1995 ◽  
Vol 379 ◽  
Author(s):  
Keith R. Evans ◽  
R. Kaspi ◽  
J.E. Ehret ◽  
M. Skowronski
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Temperature Programmed Desorption ◽  
Molecular Beam Epitaxy Growth ◽  
Ingaas Layer ◽  
Temperature Dependent ◽  
Bottom Interface ◽  
Temperature Programmed

ABSTRACTThe dynamics of In surface segregation during molecular beam epitaxy growth of In.22Ga.78As/GaAs quantum wells (QWs) are studied by temperature-programmed desorption (TPD). The TPD spectra show two In peaks: a low temperature (low-T5) peak and a high temperature (high-T5) peak, which arise from desorption of surface segregated In and dissociation of the underlying InGaAs lattice, respectively. Integration of the low-Ts peak provides quantitative determination of the surface segregated In population ΘIn, as a function of InGaAs layer thickness, incident arsenic dimer flux [(Fi(As2)], InGaAs growth temperature, and GaAs cap thickness. The surface segregated In population ΘIn, is observed to grow with InGaAs thickness, until reaching a temperature-dependent steady state value between 1.0 and 2.0 monolayers after approximately ten monolayers of growth, and then decays during GaAs overlayer growth. The variation of ΘIn with thickness closely mimics the resulting vertical composition profile, which is characterized by an In-depleted bottom interface and segregation of In into the GaAs cap. Based on these results, a sequence of: 1) In predeposition, 2) InGaAs growth, and 3) thermal desorption of Eh is proposed to produce a more square InGaAs/GaAs QW than can be obtained by more standard MBE approaches.

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