Effects of a thin InGaAs layer on carrier dynamics of InAs quantum dots

2010 ◽  
Vol 108 (9) ◽  
pp. 093521 ◽  
Author(s):  
Hi Jong Lee ◽  
Mee-Yi Ryu ◽  
Jin Soo Kim
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Ingaas Layer ◽  
Inas Quantum Dots

Carrier dynamics in self-assembled InAs quantum dots

2001 ◽  
Author(s):  
Xinhai Zhang ◽  
Jian R. Dong ◽  
Soo-Jin Chua
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Inas Quantum Dots ◽  
Self Assembled

Carrier dynamics in spatially ordered InAs quantum dots

2002 ◽  
Vol 719 ◽  
Author(s):  
Jörg Siegert ◽  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Rosa Leon ◽  
Sergio Chaparro ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Inas Quantum Dots ◽  
Dislocation Arrays ◽  
Spatial Ordering

AbstractSpatial ordering of InAs quantum dots was attained by using misfit dislocations generated in a metastable InGaAs layer by means of thermal annealing. Influence of quantum dot positional ordering and dot proximity to dislocation arrays on carrier dynamics was studied by timeresolved photoluminescence. Substantially narrower inhomogeneous broadening from the ordered quantum dots was observed. Excitation intensity dependence of the photoluminescence intensity and carrier lifetime indicates stronger influence of nonradiative recombination for the ordered quantum dot structures. Numerical simulations allow estimating electron and hole capture rates from the quantum dots to traps located either at the quantum dot interfaces or in the vicinity of the quantum dots.

Electronic Coupling Effects on the Optical Properties and Carrier Dynamics of InAs Quantum Dots

2002 ◽  
Vol 190 (2) ◽  
pp. 577-581 ◽  
Author(s):  
M. Gurioli ◽  
S. Sanguinetti ◽  
S. Lozzia ◽  
E. Grilli ◽  
M. Guzzi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Carrier Dynamics ◽  
Electronic Coupling ◽  
Coupling Effects ◽  
Inas Quantum Dots

Effects of a InGaAs Strained Layer on Structures and Photoluminescence Characteristics of InAs Quantum Dots

2010 ◽  
Vol 148-149 ◽  
pp. 897-902
Author(s):  
Jian Ming Yao ◽  
Ling Min Kong ◽  
Shi Lai Wang
Keyword(s):  
Quantum Dots ◽  
Integral Intensity ◽  
Wetting Layer ◽  
Ingaas Layer ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Strained Layer ◽  
Gaas Matrix ◽  
Electronic Microscope ◽  
Temperature Dependent Photoluminescence

The influences of a thin InGaAs layer grown on GaAs(100) substrate before deposited InAs self-assembled quantum dots(SAQDs) were experimentally investigated. Scanning electronic microscope (SEM) measurements show that the InGaAs strained layer may release the strain between wetting layer and QDs, and then enlarge size of QDs. When the thickness of InAs layer is small, the QDs are chained. Temperature dependent photoluminescence (TDPL) measurements show that the PL peaks of InAs QDs with In0.1Ga0.9As show much more red shift compared with the QDs directly deposited on GaAs matrix, and PL integral intensity enhances as T rises from 50K to 90K. We attribute this enhancement to the small potential barrier between WL and QDs produced by the InGaAs stained layer.

scholarly journals Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots

2018 ◽  
Vol 202 ◽  
pp. 20-26 ◽  
Author(s):  
Ying Wang ◽  
Xinzhi Sheng ◽  
Qing Yuan ◽  
Qinglin Guo ◽  
Shufang Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Carrier Dynamics ◽  
Electronic Coupling ◽  
Hybrid Nanostructure ◽  
Inas Quantum Dots ◽  
Ingaas Quantum Well

scholarly journals Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

2007 ◽  
Vol 61 ◽  
pp. 180-184 ◽  
Author(s):  
J L Casas Espinola ◽  
M Dybic ◽  
S Ostapenko ◽  
T V Torchynska ◽  
G Polupan
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Carrier Dynamics ◽  
Inas Quantum Dots ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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