Monte Carlo study of the early growth stages of 3C-SiC on misoriented and 6H-SiC substrates: role of step-island interaction

2014 ◽  
Vol 11 (11-12) ◽  
pp. 1606-1610
Author(s):  
M. Camarda ◽  
A. La Magna ◽  
F. La Via
2015 ◽  
Vol 821-823 ◽  
pp. 201-204
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via

In this paper we use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC step-bunched substrates with miscuts towards the <11-20> and <1-100> directions. We find that the preferential 3C conversion observed on <1-100> misoriented substrates could be due to a different step-to-island interaction which enhances island stability and expansion in this specific direction. For this reason 3-4° degrees off step-bunched 6H substrates with miscut towards the <1-100> direction should be the best choice for the stable and reproducible hetero-polytypical growth of high quality cubic epitaxial films.


2008 ◽  
Vol 205 (6) ◽  
pp. 1343-1348 ◽  
Author(s):  
D. Baldomir ◽  
D. Serantes ◽  
M. Pereiro ◽  
J. Rivas ◽  
C. Vázquez-Vázquez ◽  
...  

2000 ◽  
Vol 113 (16) ◽  
pp. 6992-7005 ◽  
Author(s):  
J. P. Wittmer ◽  
P. van der Schoot ◽  
A. Milchev ◽  
J. L. Barrat

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