STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells

2015 ◽  
Vol 12 (4-5) ◽  
pp. 469-472 ◽  
Author(s):  
R. M. Kemper ◽  
P. Veit ◽  
C. Mietze ◽  
A. Dempewolf ◽  
T. Wecker ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stacking Faults ◽  
Optical Emission ◽  
Cubic Gan

Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures

2014 ◽  
Vol 1736 ◽  
Author(s):  
D.J. As ◽  
R. Kemper ◽  
C. Mietze ◽  
T. Wecker ◽  
J.K.N. Lindner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Film Thickness ◽  
Quantum Wells ◽  
Emission Intensity ◽  
Optical Emission ◽  
Quantum Well Structures ◽  
Spatially Resolved ◽  
Scanning Transmission ◽  
Cubic Gan

ABSTRACTIn this contribution we report on the optical properties of cubic AlN/GaN asymmetric multi quantum wells (MQW) structures on 3C-SiC/Si (001) substrates grown by radio-frequency plasma-assisted molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) and spatially resolved cathodoluminescence (CL) at room temperature and at low temperature are used to characterize the optical properties of the cubic AlN/GaN MQW structures. An increasing CL emission intensity with increasing film thickness due to the improved crystal quality was observed. This correlation can be directly connected to the reduction of the linewidth of x-ray rocking curves with increasing film thickness of the c-GaN films. Defects like stacking faults (SFs) on the {111} planes, which also can be considered as hexagonal inclusions in the cubic crystal matrix, lead to a decrease of the CL emission intensity. With low temperature CL line scans also monolayer fluctuations of the QWs have been detected and the observed transition energies agree well with solutions calculated using a one-dimensional (1D) Schrödinger-Poisson simulator.

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes

2006 ◽  
Vol 527-529 ◽  
pp. 351-354 ◽  
Author(s):  
M.S. Miao ◽  
Walter R.L. Lambrecht
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
First Principles ◽  
Driving Force ◽  
Stacking Faults ◽  
Band Gaps ◽  
Partial Dislocations ◽  
Band Structure Calculations ◽  
Thermodynamic Driving Force ◽  
Structure Calculations

The electronic driving force for growth of stacking faults (SF) in n-type 4H SiC under annealing and in operating devices is discussed. This involves two separate aspects: an overall thermodynamic driving force due to the capture of electrons in interface states and the barriers that need to be overcome to create dislocation kinks which advance the motion of partial dislocations and hence expansion of SF. The second problem studied in this paper is whether 3C SiC quantum wells in 4H SiC can have band gaps lower than 3C SiC. First-principles band structure calculations show that this is not the case due to the intrinsic screening of the spontaneous polarization fields.

Growth of Cubic GAN on (001) GAAS

1995 ◽  
Vol 395 ◽  
Author(s):  
O. Brandt ◽  
H. Yang ◽  
A. Trampert ◽  
K. H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Desorption Rate ◽  
Natural Consequence ◽  
Subsequent Growth ◽  
Nucleation Stage ◽  
Cubic Gan ◽  
Kinetics Of ◽  
Microscopic Surface

ABSTRACTWe present a study of the growth of cubic GaN films on (001) GaAs by molecular beam epitaxy. Our investigations focus on the nucleation stage as well as on the subsequent growth of GaN. The phenomenon of epitaxial growth at this extreme mismatch (20%) is demonstrated to arise from a coincidence lattice between GaAs and GaN. The presence of a high-density of stacking faults in the GaN layer is explained within this understanding as being a natural consequence of the coalescence of perfectly relaxed nuclei. We furthermore analyze the growth kinetics of GaN via the surface reconstruction transitions observed upon an impinging Ga flux, from which we obtain both the desorption rate of Ga as well as the diffusion coefficient of Ga adatoms on the Ga-stabilized GaN surface. The diffusivity of Ga is found to be very low at the growth temperatures commonly used during molecular beam epitaxy, which provides an explanation for the microscopic surface roughness observed on our samples.

Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN

1997 ◽  
Vol 164 (1) ◽  
pp. 141-144 ◽  
Author(s):  
Y. T. Rebane ◽  
Y. G. Shreter ◽  
M. Albrecht
Keyword(s):  
Quantum Wells ◽  
Stacking Faults

scholarly journals Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

2011 ◽  
Vol 679-680 ◽  
pp. 314-317 ◽  
Author(s):  
Teddy Robert ◽  
Maya Marinova ◽  
Sandrine Juillaguet ◽  
Anne Henry ◽  
Efstathios K. Polychroniadis ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
Stacking Faults ◽  
Type Ii ◽  
Mass Approximation ◽  
Natural Type ◽  
Heavily Doped ◽  
Excitonic Recombination ◽  
Different Parts

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

Valence-band structure of undoped and p-doped cubic GaN/InGaN multiple quantum wells

2001 ◽  
Vol 302-303 ◽  
pp. 106-113 ◽  
Author(s):  
S.C.P Rodrigues ◽  
G.M Sipahi ◽  
L.M.R Scolfaro ◽  
J.R Leite
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Valence Band Structure ◽  
Cubic Gan

Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101¯1) semipolar GaN template

2017 ◽  
Vol 110 (2) ◽  
pp. 022105 ◽  
Author(s):  
Yueliang Li ◽  
Haoyuan Qi ◽  
Tobias Meisch ◽  
Matthias Hocker ◽  
Klaus Thonke ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Basal Plane ◽  
Stacking Faults ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Semipolar Gan

Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
H. Machhadani ◽  
M. Tchernycheva ◽  
S. Sakr ◽  
L. Rigutti ◽  
R. Colombelli ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Near Infrared ◽  
Intersubband Absorption ◽  
Cubic Gan

Optical emission from ultrathin strained type-II InP/GaP quantum wells

2001 ◽  
Vol 79 (18) ◽  
pp. 2886-2888 ◽  
Author(s):  
F. Hatami ◽  
G. Mussler ◽  
M. Schmidbauer ◽  
W. T. Masselink ◽  
L. Schrottke ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Emission ◽  
Type Ii

scholarly journals Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
T. Czerniuk ◽  
T. Ehrlich ◽  
T. Wecker ◽  
D. J. As ◽  
D. R. Yakovlev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Cubic Gan
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