Characterization of undoped and Si-doped bulk GaN fabricated by hydride vapor phase epitaxy

2014 ◽  
Vol 11 (3-4) ◽  
pp. 573-576 ◽  
Author(s):  
Baozhu Wang ◽  
Pingping Yu ◽  
Bahadir Kucukgok ◽  
Andrew G. Melton ◽  
Na Lu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan ◽  
Si Doped

Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Flat Surface ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Extended Defect ◽  
New Approach ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Reflectance Measurements

AbstractA new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

2007 ◽  
Vol 253 (18) ◽  
pp. 7423-7428 ◽  
Author(s):  
T.B. Wei ◽  
R.F. Duan ◽  
J.X. Wang ◽  
J.M. Li ◽  
Z.Q. Huo ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Growth and characterization of low defect GaN by hydride vapor phase epitaxy

2002 ◽  
Vol 246 (3-4) ◽  
pp. 223-229 ◽  
Author(s):  
Xueping Xu ◽  
R.P Vaudo ◽  
C Loria ◽  
A Salant ◽  
G.R Brandes ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6443-6447 ◽  
Author(s):  
Peter Hacke ◽  
Atsuyoshi Maekawa ◽  
Norikatsu Koide ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organic Vapor ◽  
Metal Organic ◽  
Si Doped

Growth and doping of bulk GaN by hydride vapor phase epitaxy

2020 ◽  
Vol 29 (2) ◽  
pp. 026104 ◽  
Author(s):  
Yu-Min Zhang ◽  
Jian-Feng Wang ◽  
De-Min Cai ◽  
Guo-Qiang Ren ◽  
Yu Xu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

2020 ◽  
Vol 545 ◽  
pp. 125730 ◽  
Author(s):  
Reo Yamamoto ◽  
Nao Takekawa ◽  
Ken Goto ◽  
Toru Nagashima ◽  
Rafael Dalmau ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Si Doped

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

2010 ◽  
Vol 312 (24) ◽  
pp. 3569-3573 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Kazutoshi Watanabe ◽  
Tomoyoshi Mishima
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Bulk Gan

Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

2011 ◽  
Vol 5 (1) ◽  
pp. 011001 ◽  
Author(s):  
Henryk Teisseyre ◽  
Jaroslaw Zbigniew Domagala ◽  
Boleslaw Lucznik ◽  
Anna Reszka ◽  
Bogdan Jerzy Kowalski ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Nonpolar Gan

Polishing and characterization of thick AlN layers grown on SiC substrates by stress control hydride vapor phase epitaxy

2006 ◽  
Vol 3 (6) ◽  
pp. 1448-1452 ◽  
Author(s):  
H. Mank ◽  
B. Amstatt ◽  
D. Turover ◽  
E. Bellet-Amalric ◽  
B. Daudin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Stress Control
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