Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si

2012 ◽  
Vol 9 (7) ◽  
pp. 1610-1613 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Juha Tommila ◽  
Carl Junesand ◽  
Himanshu Kataria ◽  
Chen Hu ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Large Area ◽  
Selective Area

scholarly journals Mastering of NIL Stamps with Undercut T-Shaped Features from Single Layer to Multilayer Stamps

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 956
Author(s):  
Philipp Taus ◽  
Adrian Prinz ◽  
Heinz D. Wanzenboeck ◽  
Patrick Schuller ◽  
Anton Tsenov ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Nanoimprint Lithography ◽  
Silicon Oxide ◽  
Three Dimensional ◽  
Single Layer ◽  
Fabrication Technology ◽  
Large Area ◽  
Structural Colors ◽  
Biomimetic Structures ◽  
Morpho Butterfly

Biomimetic structures such as structural colors demand a fabrication technology of complex three-dimensional nanostructures on large areas. Nanoimprint lithography (NIL) is capable of large area replication of three-dimensional structures, but the master stamp fabrication is often a bottleneck. We have demonstrated different approaches allowing for the generation of sophisticated undercut T-shaped masters for NIL replication. With a layer-stack of phase transition material (PTM) on poly-Si, we have demonstrated the successful fabrication of a single layer undercut T-shaped structure. With a multilayer-stack of silicon oxide on silicon, we have shown the successful fabrication of a multilayer undercut T-shaped structures. For patterning optical lithography, electron beam lithography and nanoimprint lithography have been compared and have yielded structures from 10 µm down to 300 nm. The multilayer undercut T-shaped structures closely resemble the geometry of the surface of a Morpho butterfly, and may be used in future to replicate structural colors on artificial surfaces.

scholarly journals Uniform Pressing Mechanism in Large-Area Roll-to-Roll Nanoimprint Lithography Process

2021 ◽  
Vol 11 (20) ◽  
pp. 9571
Author(s):  
Ga Eul Kim ◽  
Hyuntae Kim ◽  
Kyoohee Woo ◽  
Yousung Kang ◽  
Seung-Hyun Lee ◽  
...  
Keyword(s):  
Contact Pressure ◽  
Nanoimprint Lithography ◽  
Applied Pressure ◽  
Machine Learning Techniques ◽  
Conventional System ◽  
Large Area ◽  
High Productivity ◽  
Roll To Roll ◽  
Learning Techniques ◽  
Roller Machine

We aimed to increase the processing area of the roll-to-roll (R2R) nanoimprint lithography (NIL) process for high productivity, using a long roller. It is common for a long roller to have bending deformation, geometric errors and misalignment. This causes the non-uniformity of contact pressure between the rollers, which leads to defects such as non-uniform patterning. The non-uniformity of the contact pressure of the conventional R2R NIL system was investigated through finite element (FE) analysis and experiments in the conventional system. To solve the problem, a new large-area R2R NIL uniform pressing system with five multi-backup rollers was proposed and manufactured instead of the conventional system. As a preliminary experiment, the possibility of uniform contact pressure was confirmed by using only the pressure at both ends and one backup roller in the center. A more even contact pressure was achieved by using all five backup rollers and applying an appropriate pushing force to each backup roller. Machine learning techniques were applied to find the optimal combination of the pushing forces. In the conventional pressing process, it was confirmed that pressure deviation of the contact area occurred at a level of 44%; when the improved system was applied, pressure deviation dropped to 5%.

Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates

2014 ◽  
Vol 386 ◽  
pp. 107-112 ◽  
Author(s):  
Kate J. Norris ◽  
Junce Zhang ◽  
David M. Fryauf ◽  
Gary A. Gibson ◽  
Steven J. Barcelo ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Single Crystal ◽  
Nanoimprint Lithography ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Nanopillar Arrays

scholarly journals Large-Area Subwavelength Aperture Arrays Fabricated Using Nanoimprint Lithography

2008 ◽  
Vol 7 (5) ◽  
pp. 527-531 ◽  
Author(s):  
J.L. Skinner ◽  
L.L. Hunter ◽  
A.A. Talin ◽  
J. Provine ◽  
D.A. Horsley
Keyword(s):  
Nanoimprint Lithography ◽  
Large Area ◽  
Subwavelength Aperture ◽  
Aperture Arrays

scholarly journals Large-Area Resonance-Tuned Metasurfaces for On-Demand Enhanced Spectroscopy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Masanobu Iwanaga ◽  
Bongseok Choi ◽  
Hideki T. Miyazaki ◽  
Yoshimasa Sugimoto ◽  
Kazuaki Sakoda
Keyword(s):  
Nanoimprint Lithography ◽  
Near Infrared ◽  
Cost Effective ◽  
Silicon On Insulator ◽  
Fine Tuning ◽  
Infrared Range ◽  
Large Area ◽  
Optical Resonance ◽  
Optical Resonances ◽  
Soi Substrates

We show an effective procedure for lateral structure tuning in nanoimprint lithography (NIL) that has been developed as a vertical top-down method fabricating large-area nanopatterns. The procedure was applied to optical resonance tuning in stacked complementary (SC) metasurfaces based on silicon-on-insulator (SOI) substrates and was found to realize structure tuning at nm precision using only one mold in the NIL process. The structure tuning enabled us to obtain fine tuning of the optical resonances, offering cost-effective, high-throughput, and high-precision nanofabrication. We also demonstrate that the tuned optical resonances selectively and significantly enhance fluorescence (FL) of dye molecules in a near-infrared range. FL intensity on a SC metasurface was found to be more than 450-fold larger than the FL intensity on flat Au film on base SOI substrate.

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