71-5: In-Depth Study on Large-Area Bar-Printing and Selective-Area Direct Patterning of Metal Oxide Dielectrics for High-Performance Transistor Application

2016 ◽  
Vol 47 (1) ◽  
pp. 966-969 ◽  
Author(s):  
Myung-Han Yoon ◽  
Won-June Lee ◽  
Won-Tae Park ◽  
Sungjun Park ◽  
Yong-Young Noh
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Large Area ◽  
Direct Patterning ◽  
Selective Area ◽  
Depth Study

Progress in Large Area Selective Silicon Deposition for TFT/LCD Applications

1994 ◽  
Vol 345 ◽  
Author(s):  
Jun H. Souk ◽  
Gregory N. Parsons
Keyword(s):  
High Performance ◽  
Hydrogen Plasma ◽  
Scale Up ◽  
Silicon Etching ◽  
Rf Power ◽  
Large Area ◽  
Selective Area ◽  
Process Scale Up ◽  
Process Scale ◽  
Area Deposition

AbstractWe have previously demonstrated selective area deposition of n+ microcrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-mediated silicon etching.

Progress in large area Selective Silicon Deposition for TFT/LCD Applications

1994 ◽  
Vol 336 ◽  
Author(s):  
Jun H. Souk ◽  
Gregory N. Parsons
Keyword(s):  
High Performance ◽  
Hydrogen Plasma ◽  
Scale Up ◽  
Silicon Etching ◽  
Rf Power ◽  
Large Area ◽  
Selective Area ◽  
Process Scale Up ◽  
Process Scale ◽  
Area Deposition

We have previously demonstrated selective area deposition of n+ Macrocrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate Amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-Mediated silicon etching.

scholarly journals Hybrid Graphene-Metal Oxide Solution Processed Electron Transport Layers for Large Area High-Performance Organic Photovoltaics

2014 ◽  
Vol 26 (13) ◽  
pp. 2078-2083 ◽  
Author(s):  
Michail J. Beliatis ◽  
Keyur K. Gandhi ◽  
Lynn J. Rozanski ◽  
Rhys Rhodes ◽  
Liam McCafferty ◽  
...  
Keyword(s):  
Electron Transport ◽  
Metal Oxide ◽  
Organic Photovoltaics ◽  
High Performance ◽  
Large Area ◽  
Solution Processed

scholarly journals High Performance Printed Electronics on Large Area Flexible Substrates

2020 ◽  
Author(s):  
Mahesh Soni ◽  
Dhayalan Shakthivel ◽  
Adamos Christou ◽  
Ayoub Zumeit ◽  
Nivasan Yogeswaran ◽  
...  
Keyword(s):  
High Performance ◽  
Printed Electronics ◽  
Flexible Substrates ◽  
Large Area

scholarly journals Design of a Sensitive Balloon Sensor for Safe Human–Robot Interaction

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2163
Author(s):  
Dongjin Kim ◽  
Seungyong Han ◽  
Taewi Kim ◽  
Changhwan Kim ◽  
Doohoe Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Strain Sensor ◽  
High Sensitivity ◽  
Human Robot Interaction ◽  
Large Area ◽  
Tactile Sensors ◽  
Robot Interaction ◽  
Mechanical Crack ◽  
Flexible Strain Sensor ◽  
Contact Sensing

As the safety of a human body is the main priority while interacting with robots, the field of tactile sensors has expanded for acquiring tactile information and ensuring safe human–robot interaction (HRI). Existing lightweight and thin tactile sensors exhibit high performance in detecting their surroundings. However, unexpected collisions caused by malfunctions or sudden external collisions can still cause injuries to rigid robots with thin tactile sensors. In this study, we present a sensitive balloon sensor for contact sensing and alleviating physical collisions over a large area of rigid robots. The balloon sensor is a pressure sensor composed of an inflatable body of low-density polyethylene (LDPE), and a highly sensitive and flexible strain sensor laminated onto it. The mechanical crack-based strain sensor with high sensitivity enables the detection of extremely small changes in the strain of the balloon. Adjusting the geometric parameters of the balloon allows for a large and easily customizable sensing area. The weight of the balloon sensor was approximately 2 g. The sensor is employed with a servo motor and detects a finger or a sheet of rolled paper gently touching it, without being damaged.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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