Plasma-assisted MBE growth of ZnO on GaAs substrate with a ZnSe buffer layer

2012 ◽  
Vol 9 (8-9) ◽  
pp. 1809-1812 ◽  
Author(s):  
Kuaile Zhao ◽  
Lijia Ye ◽  
M. C. Tamargo ◽  
A. Shen
Keyword(s):  
Buffer Layer ◽  
Gaas Substrate ◽  
Mbe Growth

A highly mismatched InxGa1−xAs/AlGaAs (0 ≦ x ≦ 0.5) pseudomorphic HEMT on GaAs substrate using an Inx/2Ga1−x/2As buffer layer

1997 ◽  
Vol 41 (10) ◽  
pp. 1469-1474 ◽  
Author(s):  
Takashi Mizutani ◽  
K. Maezawa ◽  
Jun-Ichi Nozaki ◽  
Masashi Arakawa ◽  
Shigeru Kishimoto
Keyword(s):  
Buffer Layer ◽  
Gaas Substrate

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

scholarly journals Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer

2019 ◽  
Vol 191 ◽  
pp. 406-412 ◽  
Author(s):  
Qi Lu ◽  
Richard Beanland ◽  
Denise Montesdeoca ◽  
Peter J. Carrington ◽  
Andrew Marshall ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gaas Substrate ◽  
Low Bandgap ◽  
Metamorphic Buffer

MBE growth and electrical properties of InSb film on GaAs substrate

2010 ◽  
Author(s):  
Y. H. Zhang ◽  
P. P. Chen ◽  
T. Lin ◽  
H. Xia ◽  
T. X. Li
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Mbe Growth

MBE Growth and Characterization of CdTe, ZnTe Epilayers and CdTe/ZnCdTe Superlattices on GaAs Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
A.E. Milokhin ◽  
I.E. Trofimov ◽  
M.V. Petrov ◽  
F.F. Balakirev ◽  
V.D. Kuzmin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Buffer Layer ◽  
Lattice Constant ◽  
Strong Influence ◽  
High Crystalline Quality ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Substrates

Semiconductor heterostuctures ZnxCd1−xTe/CdTe were found to be of interest recently due to their potential practical usage. The reason for this is the beautiful variety of electrical heterostucture properties which arise from the strong influence of elastic deformation distribution. Thin epilayer films and superlattices ZnxCd1−xTe/CdTe were prepared on GaAs semi-isolator substrates by MBE technology with RHEED oscillation measurements of the deposited layers. X-ray measurements have shown high crystalline quality of the samples.We have performed Raman scattering studies of ZnxZnxCd1−xTe/CdTe structures. The data obtained were interpreted as a proff of the pseudomorphous growth model. That is, ZnxCd1−xTe/CdTe SLS keeps the lattice constant of the buffer layer.

Double Axis X-Ray Diffractometry Analysis of the Homoepitaxial Interface Between Substrate and Buffer Layer

1990 ◽  
Vol 208 ◽  
Author(s):  
G. Stephan Green ◽  
Brian K. Tanner ◽  
Philip Kightley
Keyword(s):  
Buffer Layer ◽  
Interfacial Layer ◽  
Gaas Substrate ◽  
Interface Layer ◽  
Lattice Parameter ◽  
Good Match ◽  
Low Contrast ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTHigh resolution double axis X-ray diffractometry has been undertaken on InGaAs/AlGaAs strained layer epitaxial systems on (001) GaAs substrates. A clear set of fringes has been identified which arises due to the presence of an imperfect layer at the interface between the GaAs substrate and the undoped GaAs epitaxial buffer layer. The period corresponds to the Pendellosung period for the whole epitaxial layer stack. These fringes have very low contrast and are not present in all specimens studied. Detailed simulations have been undertaken assuming a thin interfacial layer of GaAs with a different lattice parameter to the substrate. The system is equivalent to a Bragg case X-ray interferometer. Fringe amplitude is found to vary linearly with interface layer thickness and increases with mismatch of this layer. A good match between experiment and simulation was obtained for a 1 nm layer mismatched by 3000 ppm. The presence of such a layer, probably GaCxAsl-x has been confirmed by transmission electron microscopy. We show that highly sh'rained layers of this thickness between layers over 1 micron in thickness can lead to splitting of high intensity layer peaks, giving rise to possible misinterpretation of data.

Arsenic-free GaAs substrate preparation and direct growth of GaAs/AlGaAs multiple quantum well without buffer layer

1995 ◽  
Vol 150 ◽  
pp. 13-17 ◽  
Author(s):  
Kanji Iizuka ◽  
Kazuo Matsumaru ◽  
Toshimasa Suzuki ◽  
Haruo Hirose ◽  
Kenji Suzuki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Substrate Preparation ◽  
Direct Growth
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