Measurements of generation-recombination effect by low-frequency phase-noise technique in AlGaN/GaN MOSHFETs

2011 ◽  
Vol 8 (5) ◽  
pp. 1539-1543 ◽  
Author(s):  
Cemil Kayis ◽  
Jacob H. Leach ◽  
C.Y. Zhu ◽  
Mo Wu ◽  
X. Li ◽  
...  
2007 ◽  
Vol 07 (04) ◽  
pp. C69-C74
Author(s):  
K. TAKAGI

The low frequency phase and amplitude or average collector current noises are studied in a bipolar transistor. The transit time fluctuation is calculated from the diffusion coefficient fluctuation in the base. The phase noise is proportional to the base transit time fluctuation of the carriers. We discuss the relation between the phase and amplitude fluctuations and find both fluctuations correlate each other in low frequency. An experimental study is carried out in a bipolar transistor.


1989 ◽  
Vol 25 (12) ◽  
pp. 774 ◽  
Author(s):  
K.J. Williams ◽  
A. Dandridge ◽  
A.D. Kersey ◽  
J.F. Weller ◽  
A.M. Yurek ◽  
...  

2017 ◽  
Vol 110 (2) ◽  
pp. 021106 ◽  
Author(s):  
Fang Liu ◽  
Yaoyao Zhou ◽  
Juan Yu ◽  
Jiale Guo ◽  
Yang Wu ◽  
...  

1999 ◽  
Vol 20 (1) ◽  
pp. 54-56 ◽  
Author(s):  
Ying-Che Tseng ◽  
W.M. Huang ◽  
E. Spears ◽  
D. Spooner ◽  
D. Ngo ◽  
...  

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