Influence of surface structure on the performance of black-silicon solar cell

2010 ◽  
Vol 7 (11-12) ◽  
pp. 2778-2784 ◽  
Author(s):  
Ching-Hsi Lin ◽  
Dimitre Z. Dimitrov ◽  
Chen-Hsun Du ◽  
Chung-Wen Lan
Keyword(s):  
Solar Cell ◽  
Surface Structure ◽  
Silicon Solar Cell ◽  
Black Silicon

scholarly journals Large-Area Crystalline Silicon Solar Cell Using Novel Antireflective Nanoabsorber Texturing Surface by Multihollow Cathode Plasma System and Spin-On Doping

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Utpal Gangopadhyay ◽  
Sukhendu Jana ◽  
Sayan Das
Keyword(s):  
Solar Cell ◽  
Hollow Cathode ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Black Silicon ◽  
Textured Surface ◽  
Crystalline Silicon Solar Cell ◽  
Rf Power ◽  
Large Area

We present 11.7% efficient p-type crystalline silicon solar cells with a nanoscale textured surface and no dielectric antireflection coating. We propose nanocrystalline-like textured surface consisting of nanocrystalline columnar structures of diameters from 50 to 100 nm and depth of about 500 nm formed by reactive-ion etching (RIE) in multihollow cathode system. This novel nano textured surface acts as an antireflective absorbing surface of c-Si abbreviate as ARNAB (antireflective nanoabsorber). Light shining on the surface of RIE-etched silicon bounces back and forth between the spikes in such a way that most of it never comes back. Radio frequency (RF) hollow cathode discharge allows an improvement of plasma density by an order of magnitude in comparison to standard RF parallel-plate discharge. Desirable black silicon layer has been achieved when RF power of about 20 Watt per one hollow cathode glow is applied for our multihollow cathode system. The RF power frequency was 13.56 MHz. The antireflection property of ARNAB textured surface has been investigated and compared with wet-textured and PECVD coated silicon samples. Solar cell using low-cost spin-on coating technique has been demonstrated in this paper. We have successfully achieved 11.7% efficient large area (98 cm2) ARNAB textured crystalline silicon solar cell using low-cost spin-on coating (SOD) doping.

scholarly journals Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Bangwu Liu ◽  
Sihua Zhong ◽  
Jinhu Liu ◽  
Yang Xia ◽  
Chaobo Li
Keyword(s):  
Solar Cell ◽  
Silicon Nitride ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Black Silicon ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Nitride Films ◽  
Plasma Immersion Ion Implantation

The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (μ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%.

scholarly journals Effective Passivation of Large Area Black Silicon Solar Cells bySiO2/SiNx:H Stacks

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Zengchao Zhao ◽  
Bingye Zhang ◽  
Ping Li ◽  
Wan Guo ◽  
Aimin Liu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Silicon Solar Cell ◽  
Internal Quantum Efficiency ◽  
State Density ◽  
Electrical Performance ◽  
Silicon Solar Cells ◽  
Black Silicon ◽  
Large Area

The performance of black silicon solar cells with various passivation films was characterized. Large area (156×156 mm2) black silicon was prepared by silver-nanoparticle-assisted etching on pyramidal silicon wafer. The conversion efficiency of black silicon solar cell without passivation is 13.8%. For the SiO2andSiNx:H passivation, the conversion efficiency of black silicon solar cells increases to 16.1% and 16.5%, respectively. Compared to the single film of surface passivation of black silicon solar cells, the SiO2/SiNx:H stacks exhibit the highest efficiency of 17.1%. The investigation of internal quantum efficiency (IQE) suggests that the SiO2/SiNx:H stacks films decrease the Auger recombination through reducing the surface doping concentration and surface state density of the Si/SiO2interface, andSiNx:H layer suppresses the Shockley-Read-Hall (SRH) recombination in the black silicon solar cell, which yields the best electrical performance of b-Si solar cells.

scholarly journals An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhi-Quan Zhou ◽  
Fei Hu ◽  
Wen-Jie Zhou ◽  
Hong-Yan Chen ◽  
Lei Ma ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Black Silicon ◽  
Crystalline Silicon Solar Cell

Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future

2016 ◽  
Vol 27 (30) ◽  
pp. 305302 ◽  
Author(s):  
Arijit Bardhan Roy ◽  
Arup Dhar ◽  
Mrinmoyee Choudhuri ◽  
Sonali Das ◽  
S Minhaz Hossain ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Black Silicon ◽  
Cell Analysis

An 18.9% efficient black silicon solar cell achieved through control of pretreatment of Ag/Cu MACE

2019 ◽  
Vol 30 (9) ◽  
pp. 8667-8675 ◽  
Author(s):  
Pengfei Zhang ◽  
Hengchao Sun ◽  
Ke Tao ◽  
Rui Jia ◽  
Guoyu Su ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Black Silicon
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