scholarly journals Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Bangwu Liu ◽  
Sihua Zhong ◽  
Jinhu Liu ◽  
Yang Xia ◽  
Chaobo Li
Keyword(s):  
Solar Cell ◽  
Silicon Nitride ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Black Silicon ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Nitride Films ◽  
Plasma Immersion Ion Implantation

The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (μ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%.

Low Temperature Formation of Silicon Nitride Film: Combination of Catalytic-Nitridation and Catalytic-CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
A. Izumi ◽  
A. Kikkawa ◽  
H. Matsumura
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Nitride Films ◽  
Voltage Curve ◽  
Capacitance Voltage ◽  
Injection Type ◽  
Substrate Temperatures

AbstractIn this work silicon nitride films are formed as substrate temperatures 250°C by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that inserting nitridation layer about 2 nm-thick before growing the silicon nitride films, injection-type hysteresis of capacitance-voltage curve is drastically reduced from 1.4 V to 0.05 V for 40 nm-thick SiNx.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

The Effects of Chemical Vapor Cleaning Chemistries on Silicon Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
S.E. Beck ◽  
A.G. Gilicinski ◽  
B.S. Felker ◽  
J.G. Langan ◽  
D.A. Bohling ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Treatment ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Silicon Surfaces ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Thin Silicon

ABSTRACTThis study explores the effects of two chemical vapor cleaning chemistries on silicon surfaces. The silicon surfaces are not significantly roughened by exposure to either process. Trace amounts of fluorine are found on the surfaces exposed to 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (HFAC). A thin silicon nitride film forms on the silicon surface as a result of exposure to the HMDS process and is attributed to the H2/N2 plasma treatment used in the first step of the process.

Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KD12 ◽  
Author(s):  
Ken Mishina ◽  
Atsufumi Ogishi ◽  
Kiyoshi Ueno ◽  
Sachiko Jonai ◽  
Norihiro Ikeno ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
High Resistance ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film
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