scholarly journals DC characteristics and high frequency response of GaN nanowire metal-oxide-semiconductor field-effect transistor

2009 ◽  
Vol 6 (S2) ◽  
pp. S535-S537 ◽  
Author(s):  
Jeng-Wei Yu ◽  
Han-Min Wu ◽  
Bo-Chun Yeh ◽  
Lung-Han Peng
Keyword(s):  
Frequency Response ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Frequency Response ◽  
Dc Characteristics ◽  
Gan Nanowire ◽  
Effect Transistor

Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications

2016 ◽  
Vol 13 (2) ◽  
pp. 39-50 ◽  
Author(s):  
Zheng Chen ◽  
Yiying Yao ◽  
Wenli Zhang ◽  
Dushan Boroyevich ◽  
Khai Ngo ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Operating Temperature ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Packaging Materials ◽  
Temperature Capability ◽  
Effect Transistor

This article presents a 1,200-V, 120-A silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) phase-leg module capable of operating at 200°C ambient temperature. Paralleling six 20-A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the direct-bonded-copper substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared with a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off overvoltages compared with the commercial module.

scholarly journals New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1089
Author(s):  
Fabrizio Palma
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Efficiency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Detection ◽  
Effect Transistor ◽  
Transistor Mos

The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qualitative and quantitative explanation of the processes involved. For a long time, high-frequency detection based on MOS technology was explained using plasma wave detection theory. In this paper, we review the rectification mechanism in light of high-frequency numerical simulations, showing features never examined until now. The results achieved substantially change our understanding of terahertz (THz) rectification in semiconductors, and can be interpreted by the model based on the self-mixing process in the device substrate, providing a new and essential tool for designing this type of detector.

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