Direct calculation of metal–oxide–semiconductor field effect transistor high frequency noise parameters

1998 ◽  
Vol 16 (2) ◽  
pp. 850-854 ◽  
Author(s):  
C. H. Chen ◽  
M. J. Deen
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Direct Calculation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
High Frequency Noise ◽  
Effect Transistor

High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

2007 ◽  
Vol 101 (12) ◽  
pp. 124501 ◽  
Author(s):  
Reza Navid ◽  
Christoph Jungemann ◽  
Thomas H. Lee ◽  
Robert W. Dutton
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
High Frequency Noise

scholarly journals New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1089
Author(s):  
Fabrizio Palma
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Efficiency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Detection ◽  
Effect Transistor ◽  
Transistor Mos

The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qualitative and quantitative explanation of the processes involved. For a long time, high-frequency detection based on MOS technology was explained using plasma wave detection theory. In this paper, we review the rectification mechanism in light of high-frequency numerical simulations, showing features never examined until now. The results achieved substantially change our understanding of terahertz (THz) rectification in semiconductors, and can be interpreted by the model based on the self-mixing process in the device substrate, providing a new and essential tool for designing this type of detector.

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