Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy

2008 ◽  
Vol 5 (9) ◽  
pp. 3069-3072 ◽  
Author(s):  
Hiroto Sekiguchi ◽  
Kei Kato ◽  
Akihiko Kikuchi ◽  
Katsumi Kishino
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Rf Plasma ◽  
Light Emitting

ZnO:Sb/ZnO:Ga Light Emitting Diode onc-Plane Sapphire by Molecular Beam Epitaxy

2010 ◽  
Vol 3 (3) ◽  
pp. 032101 ◽  
Author(s):  
Zheng Yang ◽  
Sheng Chu ◽  
Winnie V. Chen ◽  
Lin Li ◽  
Jieying Kong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Light Emitting

Monolithic 1.3 [micro sign]m resonant cavity light emitting diode grown by solid source molecular beam epitaxy

1998 ◽  
Vol 34 (15) ◽  
pp. 1519 ◽  
Author(s):  
M. Jalonen ◽  
J. Köngäs ◽  
M. Toivonen ◽  
P. Savolainen ◽  
S. Orsila ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Light Emitting

High-Power 1.3-$\mu$m Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy

2007 ◽  
Vol 19 (2) ◽  
pp. 109-111 ◽  
Author(s):  
S. K. Ray ◽  
T. L. Choi ◽  
K. M. Groom ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
High Power ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Light Emitting

Stable‐wavelength operation of europium‐doped GaN nanocolumn light‐emitting diodes grown by rf‐plasma‐assisted molecular beam epitaxy

2017 ◽  
Vol 53 (10) ◽  
pp. 666-668 ◽  
Author(s):  
H. Sekiguchi ◽  
T. Imanishi ◽  
R. Matsuzaki ◽  
K. Ozaki ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Rf Plasma ◽  
Light Emitting

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

2014 ◽  
Vol 2 (21) ◽  
pp. 4112-4116 ◽  
Author(s):  
Wenliang Wang ◽  
Yunhao Lin ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Shizhong Zhiou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Light Emitting ◽  
New System

High-quality nonpolar m-plane GaN-based light-emitting diode (LED) wafers have been deposited on LiGaO2(100) substrates by a combination of pulsed laser deposition and molecular beam epitaxy technologies.

Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy

2005 ◽  
Vol 44 (6A) ◽  
pp. 3951-3953 ◽  
Author(s):  
Tsuyoshi Sunohara ◽  
Cheng Li ◽  
Yoshinori Ozawa ◽  
Takashi Suemasu ◽  
Fumio Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Active Region ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Light Emitting
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