A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

2014 ◽  
Vol 2 (21) ◽  
pp. 4112-4116 ◽  
Author(s):  
Wenliang Wang ◽  
Yunhao Lin ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Shizhong Zhiou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Light Emitting ◽  
New System

High-quality nonpolar m-plane GaN-based light-emitting diode (LED) wafers have been deposited on LiGaO2(100) substrates by a combination of pulsed laser deposition and molecular beam epitaxy technologies.

Low Temperature Epitaxy of Si on Dihydride-Terminated Si (001): Energetic Versus Thermal Growth

1996 ◽  
Vol 441 ◽  
Author(s):  
M. E. Taylor ◽  
Harry A. Atwater ◽  
M. V. Ramana Murty
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Interface Roughness ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Comparison Of The Results ◽  
Si Films

AbstractPulsed laser deposition of Si on dihydride-terminated (l×1) Si (001) at low temperatures yields epitaxial layers, unlike molecular beam epitaxy. Si films were grown by ultrahigh vacuum pulsed laser deposition on the dihydride surface at substrate temperatures from 40 °C to 350 ° C. Epitaxial thickness and interface roughness were measured by high-resolution cross-sectional transmission electron microscopy and found to be comparable to known data for Si films grown by molecular beam epitaxy on monohydride-terminated (2×l) Si (001). Si films were grown at 200 °C by pulsed laser deposition on the dihydride surface at argon background pressures between 10− torr and 10−1 torr. Ion probe time of flight data was collected over the same pressure range. Comparison of the results suggests that loss of epitaxy is correlated with low incident energy. This, in conjunction with information on surface reconstruction obtained from reflection high-energy electron diffraction, suggests that the mechanism enabling epitaxy on the dihydride surface is Si subplantation, a mechanism only possible in growth with an energetic beam.

Inhibited SN Surface Segregation in Epitaxial SNxGE1-x Alloy Films Grown by Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
M.E. Taylor ◽  
G. He ◽  
C. Saipetch ◽  
H.A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Strong Tendency ◽  
Alloy Films

AbstractEpitaxial and compositionally homogeneous SnxGe1-x alloy films have been grown on Si (001) by pulsed laser deposition using elemental Sn and Ge targets. these results demonstrate that pulsed laser deposition can be used to grow alloys by overcoming the strong tendency for Sn surface segregation seen in growth by other methods such as molecular beam epitaxy.

scholarly journals Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

2017 ◽  
Vol 110 (4) ◽  
pp. 041606 ◽  
Author(s):  
F. Wrobel ◽  
A. F. Mark ◽  
G. Christiani ◽  
W. Sigle ◽  
H.-U. Habermeier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Comparative Study ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells

2015 ◽  
Vol 141 ◽  
pp. 322-330 ◽  
Author(s):  
Mohammadreza Nematollahi ◽  
Xiaodong Yang ◽  
Lars Martin Sandvik Aas ◽  
Zahra Ghadyani ◽  
Morten Kildemo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells
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