Hydrogen- and corrosion-induced defect characterization of ZnO single crystal: A slow positron beam study

2013 ◽  
Vol 210 (7) ◽  
pp. 1418-1423 ◽  
Author(s):  
Xu-Dong Xue ◽  
Tao Wang ◽  
Jing Jiang ◽  
Yi-Chu Wu
Keyword(s):  
Single Crystal ◽  
Positron Beam ◽  
Defect Characterization ◽  
Slow Positron ◽  
Zno Single Crystal

Defect characterization of CdTe thin films using a slow positron beam

2007 ◽  
Vol 4 (10) ◽  
pp. 3659-3663 ◽  
Author(s):  
S. Neretina ◽  
D. Grebennikov ◽  
R. A. Hughes ◽  
M. Weber ◽  
K. G. Lynn ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Beam ◽  
Defect Characterization ◽  
Slow Positron ◽  
Cdte Thin Films

Defect Characterization of 6H-SiC Studied by Slow Positron Beam

2008 ◽  
Vol 21 (4) ◽  
pp. 333-338 ◽  
Author(s):  
Hai-yun Wang ◽  
Hui-min Weng ◽  
Xian-yi Zhou
Keyword(s):  
Positron Beam ◽  
Defect Characterization ◽  
Slow Positron

Hydrogen-Induced Defects of Subsurface Layer in ZnO Single Crystal Probed by a Slow Positron Beam

2012 ◽  
Vol 733 ◽  
pp. 232-235 ◽  
Author(s):  
X.D. Xue ◽  
T. Wang ◽  
J. Jiang ◽  
P.H. Li ◽  
Y.F. Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Subsurface Layer ◽  
Positron Beam ◽  
X Ray Diffraction ◽  
Slow Positron ◽  
X Ray ◽  
S Parameter ◽  
Induced Defects ◽  
Zno Single Crystal ◽  
Deformation Layer

Hydrogen-induced defects of ZnO single crystals electrochemically charged with hydrogen have been investigated by positron beam-based Doppler broadening spectroscopy, X-ray diffraction (XRD) and optical microscopy (OM). XRD and OM results indicated that a deformation layer was formed due to hydrogen-induced structural change at the subsurface of ZnO single crystal. Slow positron beam measurements showed that this deformation layer contained many defects, such as dislocations and Zn vacancies, which led to increase of S parameter.

Characterization of various reactor steels by slow positron beam

2019 ◽  
Author(s):  
Stanislav Sojak ◽  
Vladimír Kršjak ◽  
Jarmila Degmová ◽  
Martin Petriska ◽  
Vladimír Slugeň
Keyword(s):  
Positron Beam ◽  
Slow Positron ◽  
Reactor Steels

Positron Annihilation on the Surfaces of Single Crystals of Si, SiO2, Graphite and Cu

2008 ◽  
Vol 607 ◽  
pp. 152-154
Author(s):  
Wen Deng ◽  
Li Yue ◽  
Yu Xia Li ◽  
Xu Xin Cheng ◽  
Ya Qin Wei ◽  
...  
Keyword(s):  
Oxide Film ◽  
Single Crystal ◽  
Single Crystals ◽  
Silicon Oxide ◽  
Positron Beam ◽  
Implantation Energy ◽  
Slow Positron ◽  
Ratio Curve ◽  
Doppler Broadening Spectra ◽  
Beam Technique

Slow positron beam technique has been applied to measure the Doppler broadening spectra for single crystals of Cu, SiO2, graphite, virgin Si, and Si without oxide film. The results show that the Cu ratio curve shows a high peak due to Cu having 10 electrons in the 3d shells. The ratio curve of SiO2 is higher than that of graphite. For the single crystal of Cu, SiO2, graphite, and Si without oxide film, the S (W) parameters decrease (increase) as positron implantation energy increasing. Defects on the surface lead to higher S (lower W) value. For the virgin Si and the thermally grown SiO2-Si samples, the S (W) parameters increase (decrease) as positron implantation energy increasing. It can be due to Si atom at surface, with two dangling bonds, tend to form silicon oxide with O. The W parameter for the single crystal of Cu is relatively high as compared with that of the single crystals of SiO2 and graphite.

Characterization of vacancy‐type defects in Se‐implanted GaAs by means of a slow positron beam

1992 ◽  
Vol 72 (4) ◽  
pp. 1405-1409 ◽  
Author(s):  
Satoshi Fujii ◽  
Shinichi Shikata ◽  
Long Wei ◽  
Shoichiro Tanigawa
Keyword(s):  
Positron Beam ◽  
Slow Positron

Characterization of polymer films using a slow positron beam

2003 ◽  
Vol 7 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Chunqing He ◽  
Takenori Suzuki ◽  
Eisaku Hamada ◽  
Hitoshi Kobayashi ◽  
Kenjiro Kondo ◽  
...  
Keyword(s):  
Polymer Films ◽  
Positron Beam ◽  
Slow Positron

Sublimation Growth and Defect Characterization of AlN Single Crystals

2007 ◽  
Vol 1040 ◽  
Author(s):  
Shaoping Wang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Zaiyuan Ren ◽  
Jung Han ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Defect Characterization ◽  
Growth Technique ◽  
X Ray ◽  
Sublimation Growth ◽  
Growth Experiments

AbstractIn this paper, we report results from AlN single crystal growth experiments using a sublimation physical vapor transport growth technique. AlN single crystal boules up to 7mm in diameter were demonstrated. Characterization of polished AlN single crystal samples was carried out using various techniques, including synchrotron X-ray topography.

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