Spatially resolved near-field photoluminescence spectroscopy of II–VI quantum wells: The role of localized excitons

1999 ◽  
Vol 86 (12) ◽  
pp. 6793-6797 ◽  
Author(s):  
R. Cingolani ◽  
G. Bastard ◽  
M. Labardi ◽  
F. Fuso ◽  
M. Allegrini ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Spatially Resolved ◽  
Localized Excitons

Multimode Scanning Near-Field Photoluminescence Spectroscopy of InGaN Quantum Wells

2018 ◽  
Author(s):  
Saulius Marcinkevicius ◽  
Mounir Mensi ◽  
Ruslan Ivanov ◽  
Leah Y. Kuritzky ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Ingan Quantum Wells

scholarly journals Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence

2017 ◽  
Vol 7 (9) ◽  
pp. 3116 ◽  
Author(s):  
Tomas K. Uždavinys ◽  
Daniel L. Becerra ◽  
Ruslan Ivanov ◽  
Steven P. DenBaars ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Spatially Resolved ◽  
Ingan Quantum Wells

Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

1998 ◽  
Vol 73 (4) ◽  
pp. 493-495 ◽  
Author(s):  
A. Vertikov ◽  
A. V. Nurmikko ◽  
K. Doverspike ◽  
G. Bulman ◽  
J. Edmond
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Near Field ◽  
Electronic States ◽  
High Injection

Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy

2001 ◽  
Vol 79 (7) ◽  
pp. 976-978 ◽  
Author(s):  
M. S. Jeong ◽  
J. Y. Kim ◽  
Y.-W. Kim ◽  
J. O. White ◽  
E.-K. Suh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Near Field ◽  
Spatially Resolved ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near-Field Optical Microscopy

2017 ◽  
Vol 255 (5) ◽  
pp. 1700322 ◽  
Author(s):  
Satoshi Kurai ◽  
Renma Mihara ◽  
Genki Nobata ◽  
Kohei Okawa ◽  
Narihito Okada ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Near Field ◽  
Spatially Resolved ◽  
Spatially Resolved Spectroscopy ◽  
Ingan Quantum Wells

scholarly journals Bringing high spatial resolution to the far-infrared

2021 ◽  
Author(s):  
Hendrik Linz ◽  
Henrik Beuther ◽  
Maryvonne Gerin ◽  
Javier R. Goicoechea ◽  
Frank Helmich ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Formation Process ◽  
Far Infrared ◽  
Main Theme ◽  
Spatially Resolved ◽  
Research Areas ◽  
External Galaxies ◽  
Emergence Of Life ◽  
Fine Structure Lines

AbstractThe far-infrared (FIR) regime is one of the wavelength ranges where no astronomical data with sub-arcsecond spatial resolution exist. None of the medium-term satellite projects like SPICA, Millimetron, or the Origins Space Telescope will resolve this malady. For many research areas, however, information at high spatial and spectral resolution in the FIR, taken from atomic fine-structure lines, from highly excited carbon monoxide (CO), light hydrides, and especially from water lines would open the door for transformative science. A main theme will be to trace the role of water in proto-planetary discs, to observationally advance our understanding of the planet formation process and, intimately related to that, the pathways to habitable planets and the emergence of life. Furthermore, key observations will zoom into the physics and chemistry of the star-formation process in our own Galaxy, as well as in external galaxies. The FIR provides unique tools to investigate in particular the energetics of heating, cooling, and shocks. The velocity-resolved data in these tracers will reveal the detailed dynamics engrained in these processes in a spatially resolved fashion, and will deliver the perfect synergy with ground-based molecular line data for the colder dense gas.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

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