Current-voltage characteristics of superconducting flux flow transistor with a multi-channel fabricated by an inductively coupled plasma

2005 ◽  
Vol 2 (5) ◽  
pp. 1697-1701
Author(s):  
Seokcheol Ko ◽  
Hyeong-Gon Kang ◽  
Byoung-Sung Han ◽  
Hyo-Sang Choi ◽  
Myoungho Choi
Keyword(s):  
Inductively Coupled Plasma ◽  
Flux Flow ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Current Voltage Characteristics

Elemental Analysis and Current-Voltage Characteristics of LiZnP and LiZnAs Samples for Solid-State Neutron Detectors

2013 ◽  
Vol 1576 ◽  
Author(s):  
Benjamin W. Montag ◽  
Michael A. Reichenberger ◽  
Kevin R. Arpin ◽  
Kyle A. Nelson ◽  
Philip B. Ugorowski ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
High Efficiency ◽  
Electrical Characterization ◽  
Atomic Emission ◽  
Bulk Single Crystal ◽  
Neutron Detectors ◽  
Background Radiations ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Silver Epoxy

ABSTRACTResearch for a reliable solid-form semiconductor neutron detector continues because such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, larger than 10B, and easily identified above background radiations. Hence, devices composed of either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, AIBIICV, known as Nowotny-Juza compounds, are known for their desirable cubic crystal structure, and were originally studied for photonic applications. Equimolar portions of Li, Zn, and P or As were sealed under vacuum (10-6 Torr) in quartz ampoules with a graphite lining, loaded into a compounding furnace, and heated to 560 °C to form the ternary compound, LiZnP or LiZnAs, and further annealed to promote crystallization. The chemical composition of the synthesized starting material was confirmed at Galbraith Laboratories, Inc. by Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES), which showed the compounds were reacted in equal ratios, 1-1-1, to form ternary compounds. Bulk single crystal samples were grown by a high temperature technique described elsewhere. Samples were cut, polished, and prepared for electrical characterization by depositing a Ti/Au contact onto one side of the one of the samples and using silver epoxy to form the other contact. Current-voltage curves were collected for a sample with silver epoxy for both anode and cathode contact, and for a sample with a Ti-Au anode contact and silver epoxy cathode contact. A much higher resistivity was calculated, 6.6 x 1010 Ω·cm, for the sample with a Ti-Au contact compared the high conductivity seen with the sample using silver epoxy contacts.

Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si Tfts Using an Inductively Coupled Plasma Source

1996 ◽  
Vol 438 ◽  
Author(s):  
Yuanzhong Zhou ◽  
Shu Qin ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Inductively Coupled Plasma ◽  
Stress Test ◽  
Plasma Source ◽  
Trap States ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Plasma Immersion Ion Implantation ◽  
Short Time

AbstractA plasma immersion ion implantation (PIII) hydrogenation process using an inductively-coupled plasma (ICP) source is implemented for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFT's). Device parameter improvement saturates in 4 minutes, which is considerably shorter than for other reported hydrogenation methods. Stress test indicates that the devices hydrogenated by this novel technique have much better long-term reliability. The hydrogenation effects on two types of trap states are analyzed the current-voltage characteristics of the devices. The densities of deep states and tail states are significantly reduced after short time hydrogenation.

Instability of the Vortex-Antivortex System in Anisotropic Hard Superconductors with Nonlinear Current-Voltage Characteristics

2003 ◽  
Vol 17 (10n12) ◽  
pp. 589-595
Author(s):  
L. M. Fisher ◽  
A. L. Rakhmanov ◽  
A. A. Levchenko ◽  
V. A. Yampol'Skii ◽  
M. Bazilevich ◽  
...  
Keyword(s):  
Dispersion Equation ◽  
Vortex Motion ◽  
Wave Number ◽  
Flux Flow ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Stability ◽  
Small Anisotropy

The stability of the anisotropic flux flow in the vortex-antivortex system of a superconductor is theoretically studied. The vortex motion is assumed to be governed by the power current-voltage (I-V) characteristic, E ∝ Jm. It is shown that the instability of the interface between vortices and antivortices occurs even at relatively small anisotropy of the current capability of a sample if the exponent m is large. The dispersion equation defining the dependence of the increment of the instability on the wave number is obtained and analyzed. The instability leads to the macroturbulence of the flux flow which is observed in superconductors of the system Y-123.

EFFECTS OF PINNING ANISOTROPY ON YBCO FILM CURRENT-VOLTAGE CHARACTERISTICS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2803-2808
Author(s):  
C. CAMERLINGO ◽  
C. NAPPI ◽  
M. RUSSO
Keyword(s):  
Unit Length ◽  
Vortex Motion ◽  
Temperature Limit ◽  
Flux Flow ◽  
Plane Anisotropy ◽  
Current Voltage ◽  
Pinning Potential ◽  
Oriented Films ◽  
Different Temperatures ◽  
Current Voltage Characteristics

The dissipative properties of (103)/(031) oriented films YBCO films grown on (110) SrTiO3 substrates were investigated in the vortex creep motion regime and compared with characteristics of c-axis oriented films deposited on both and (001)SrTiO3 and (001)NdGaO3 substrates. The current-voltage characteristics were measured at different temperatures, using a proper geometrical bridge configuration, able to test space anisotropy. The in-plane anisotropy due to the layered structure of the superconductor was clearly observed in the (103)/(031) oriented films. Experimental data are consistent with a thermal activated mechanism of vortex motion on a periodic pinning potential, attributed to intrinsic layer pinning. The intrinsic pinning energy per unit length of magnetic field line is evaluated as U0≈400 KeV/cm, in the low temperature limit. Consistently with theory, this energy is weakly dependent on temperature, the U/KBT ratio fading out at T ≈ Tc, where flux flow mechanism is activated for vortex motion.

Superconducting flux flow transistor fabricated by an inductively coupled plasma etching technique

2004 ◽  
Vol 400 (3-4) ◽  
pp. 111-116 ◽  
Author(s):  
Hyeong-Gon Kang ◽  
Y.-H. Im ◽  
Seokcheol Ko ◽  
Sung-Hun Lim ◽  
B.-S. Han ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etching Technique ◽  
Flux Flow ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled

NBCO MICRO BRIDGE JUNCTIONS FABRICATED BY EXCIMER LASER PATTERNING

2002 ◽  
Vol 16 (09) ◽  
pp. 1301-1306
Author(s):  
ZON MORI ◽  
ZULHAIRI BIN ZULKIFLI ◽  
TOSHIYA DOI ◽  
SHINICHIRO KOBA ◽  
YOSHINORI HAKURAKU
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Zero Bias ◽  
Flux Flow ◽  
Laser Patterning ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Krf Excimer Laser ◽  
Superconducting Current

Micro bridge junctions of NdBa 2 Cu 3 O 7-δ (NBCO) thin films have been fabricated by using a pulsed KrF excimer laser. A 1 μm bridge with nonliner flux-flow like current-voltage characteristics was obtained by optimizing the laser patterning process. The superconducting current (Ic0) across the micro bridge at zero bias was 900 nA and suppressed by the radiation of microwave (10 GHz) at 77 K.

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