GaN based light emitters fabricated on bulk GaN substrates. New class of low dislocation density devices

2004 ◽  
Vol 1 (6) ◽  
pp. 1505-1510
Author(s):  
P. Perlin ◽  
M. Leszczyński ◽  
P. Prystawko ◽  
C. Skierbiszewski ◽  
M. Siekacz ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Light Emitters ◽  
New Class ◽  
Low Dislocation Density ◽  
Bulk Gan

scholarly journals Low dislocation density, high power InGaN laser diodes

2004 ◽  
Vol 9 ◽  
Author(s):  
Piotr Perlin ◽  
M. Leszczyñski ◽  
P. Prystawko ◽  
P. Wisniewski ◽  
R. Czernetzki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
High Power ◽  
Laser Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Homogeneous Distribution ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
New Generation ◽  
Better Than

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 105 cm−2, i.e. two orders of magnitude better than typical for the Epitaxial Lateral Overgrowth laser structures fabricated on sapphire. The low density and homogeneous distribution of defects in our structures enables the realization of broad stripe laser diodes. We demonstrate that our laser diodes, having 15 μm wide stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long pulses. This result, which is among the best ever reported for nitride lasers, opens the path for the development of a new generation of high power laser diodes.

LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method

2008 ◽  
Vol 600-603 ◽  
pp. 1245-1250 ◽  
Author(s):  
Fumio Kawamura ◽  
Hidekazu Umeda ◽  
Masanori Morishita ◽  
Ryohei Gejo ◽  
Masaki Tanpo ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Secondary Ion Mass Spectrometry ◽  
Impurity Content ◽  
Single Crystal Substrate ◽  
Flux Method ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
New Apparatus ◽  
Metal Flux ◽  
Gan Crystal

We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of 2.3×105 (cm-2), The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the + and – c directions, resulting in a Na concentration of 4.2 × 1014 (cm-3) in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.

Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient

2007 ◽  
Vol 46 (No. 22) ◽  
pp. L525-L527 ◽  
Author(s):  
Tadao Hashimoto ◽  
Feng Wu ◽  
James S. Speck ◽  
Shuji Nakamura
Keyword(s):  
Dislocation Density ◽  
Low Dislocation Density ◽  
Bulk Gan

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

2006 ◽  
Author(s):  
L. Marona ◽  
P. Wisniewski ◽  
P. Prystawko ◽  
S. Porowski ◽  
T. Suski ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Laser Diodes ◽  
Low Dislocation Density ◽  
Bulk Gan

Low dislocation density AlN on sapphire prepared by double sputtering and annealing

2020 ◽  
Vol 13 (9) ◽  
pp. 095501
Author(s):  
Ding Wang ◽  
Kenjiro Uesugi ◽  
Shiyu Xiao ◽  
Kenji Norimatsu ◽  
Hideto Miyake
Keyword(s):  
Dislocation Density ◽  
Low Dislocation Density

Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method

1989 ◽  
Author(s):  
M. Tatsumi ◽  
T. Kawase ◽  
T. Araki ◽  
N. Yamabayashi ◽  
T. Iwasaki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Low Dislocation Density

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates

2000 ◽  
Vol 639 ◽  
Author(s):  
T. Detchprohm ◽  
M. Yano ◽  
R. Nakamura ◽  
S. Sano ◽  
S. Mochiduki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
New Method ◽  
Growth Technique ◽  
New Approach ◽  
Density Area ◽  
Low Dislocation Density ◽  
Dislocation Densities ◽  
Movpe Growth

ABSTRACTWe have developed a new method to prepare low-dislocation-density GaN by using periodically grooved substrates in a conventional MOVPE growth technique. This new approach was demonstrated for GaN grown on periodically grooved α-Al2O3(0001), 6H-SiC(0001)Si and Si(111) substrates. Dislocation densities were 2×107 cm−2 in low-dislocation-density area.

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