scholarly journals Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

2013 ◽  
Vol 103 (19) ◽  
pp. 193507 ◽  
Author(s):  
N. Killat ◽  
M. Montes Bajo ◽  
T. Paskova ◽  
K. R. Evans ◽  
J. Leach ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Surface Step ◽  
Electron Mobility Transistors ◽  
Low Dislocation Density ◽  
Bulk Gan ◽  
Step Edges

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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