Strained VO 2 Nanostructure Thin Films with an Unaffected Insulator–Metal Transition

2020 ◽  
Vol 257 (6) ◽  
pp. 1900785
Author(s):  
Tiantian Huang ◽  
Shuxia Wang ◽  
Wei Wei ◽  
Yan Yang ◽  
Wanli Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Metal Transition

Research on Temperature Effect in Insulator–Metal Transition Selector Based on NbOx Thin Films

2018 ◽  
Vol 65 (12) ◽  
pp. 5448-5452 ◽  
Author(s):  
Ao Chen ◽  
Guokun Ma ◽  
Yuli He ◽  
Qin Chen ◽  
Chunlei Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Effect ◽  
Insulator Metal Transition

Structure, Electrical and Magnetic Properties of Thin Films of La1−xMxMnO3 on Si

1999 ◽  
Vol 562 ◽  
Author(s):  
N. N. Mateeva ◽  
P. C. Hogan ◽  
K. H. Dahmen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Transition Temperature ◽  
Buffer Layers ◽  
Ferromagnetic Transition ◽  
Electrical And Magnetic Properties ◽  
Insulator Metal Transition ◽  
Composition Structure

ABSTRACTThin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.

PERSISTENT PHOTOCONDUCTIVITY IN La0.7CaxBa1-xMnO3 THIN FILMS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3786-3791 ◽  
Author(s):  
R. CAURO ◽  
J. C. GRENET ◽  
A. GILABERT ◽  
M. G. MEDICI
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Visible Light ◽  
Low Temperatures ◽  
Transport Mechanism ◽  
Persistent Photoconductivity ◽  
Temperature Range ◽  
Insulator Metal Transition ◽  
First Time

We report, for the first time, experiments of persistent photoconductivity (PPC) in thin films of manganese perovskites La 0.7 Ca 0.25 Ba 0.05 MnO 3 and La 0.7 Ca 0.2 Ba 0.1 MnO 3 showing a persistent decrease of a few percent of the resistance after illumination with visible light. These persistent photoinduced effects are seen only in a range of low temperatures (<25 K) well below the insulator-metal transition at respectively T c=173 K and T c=120 K. In this low temperature range, the transport mechanism is rather of activated hopping type regime.

scholarly journals Tuning of Transport and Magnetic Properties in Epitaxial LaMnO3+δThin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
J. Chen ◽  
L. Hu ◽  
W. J. Lu ◽  
B. Yuan ◽  
K. J. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Transition ◽  
Compressive Strain ◽  
Ferromagnetic Transition ◽  
Strongly Correlated ◽  
Orbital Ordering ◽  
Insulator Metal Transition ◽  
Ordering Transition ◽  
Orbital Occupation

The effect of compressive strain on the transport and magnetic properties of epitaxial LaMnO3+δthin films has been investigated. It is found that the transport and magnetic properties of the LaMnO3+δthin films grown on the LaAlO3substrates can be tuned by the compressive strain through varying film thickness. And the insulator-metal transition, charge/orbital ordering transition, and paramagnetic-ferromagnetic transition are suppressed by the compressive strain. Consequently, the related electronic and magnetic transition temperatures decrease with an increase in the compressive strain. The present results can be explained by the strain-controlled lattice deformation and the consequent orbital occupation. It indicates that the lattice degree of freedom is crucial for understanding the transport and magnetic properties of the strongly correlated LaMnO3+δ.

scholarly journals Coexistence of Nonvolatile Unipolar Memory and Volatile Threshold Resistance Switching In LaMnO3 Thin Films

2020 ◽  
Author(s):  
yanfeng Yin ◽  
ying Zhang ◽  
caihong Jia ◽  
weifeng Zhang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Negative Bias ◽  
Positive Bias ◽  
Computing Technology ◽  
Insulator Metal Transition

Abstract Coexistence of nonvolatile unipolar memory and volatile threshold resistive switching was observed in Pt/LaMnO 3 /Pt system. Specifically, nonvolatile unipolar memory was achieved by applying a negative bias, while volatile threshold resistive switching was obtained at a positive bias. The formation/rupture of conducting filaments and insulator-metal transition are supposed to induce nonvolatile unipolar memory and volatile threshold resistive switching, respectively. The convenient transition between nonvolatile and volatile switching by polarity is very useful for applications in in-memory computing technology.

scholarly journals Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5132
Author(s):  
Chunzi Zhang ◽  
Ozan Gunes ◽  
Yuanshi Li ◽  
Xiaoyu Cui ◽  
Masoud Mohammadtaheri ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Typographical Error ◽  
Dc Magnetron Sputtering ◽  
Transition Behavior ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films

The authors would like to correct a typographical error in their paper [...]

scholarly journals The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2160 ◽  
Author(s):  
Chunzi Zhang ◽  
Ozan Gunes ◽  
Yuanshi Li ◽  
Xiaoyu Cui ◽  
Masoud Mohammadtaheri ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Metal Insulator ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films ◽  
Different Thickness

In this work, VO2 thin films were deposited on Si wafers (onto (100) surface) by DC magnetron sputtering under different cathode bias voltages. The effects of substrate biasing on the structural and optical properties were investigated. The results show that the metal–insulator transition (MIT) temperature of VO2 thin films can be increased up to 14 K by applying a cathode bias voltage, compared to deposition conditions without any bias. The decrease in the transition efficiency and increase in the transition temperature are attributed to the enlarged grain size, increased defects, and the residual stress in the VO2 thin films induced by biasing. The optical transmittance measurements for different thickness films indicate an attenuation coefficient of 3.1 × 107 m−1 at 2000 nm or an extinction coefficient of 4.9 in the metal phase. The optical transmittance vs wavelength characteristics point to an indirect bandgap of 0.6 ± 0.05 eV and significant scattering in the bulk and/or at the interface.

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