scholarly journals Tuning of Transport and Magnetic Properties in Epitaxial LaMnO3+δThin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
J. Chen ◽  
L. Hu ◽  
W. J. Lu ◽  
B. Yuan ◽  
K. J. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Transition ◽  
Compressive Strain ◽  
Ferromagnetic Transition ◽  
Strongly Correlated ◽  
Orbital Ordering ◽  
Insulator Metal Transition ◽  
Ordering Transition ◽  
Orbital Occupation

The effect of compressive strain on the transport and magnetic properties of epitaxial LaMnO3+δthin films has been investigated. It is found that the transport and magnetic properties of the LaMnO3+δthin films grown on the LaAlO3substrates can be tuned by the compressive strain through varying film thickness. And the insulator-metal transition, charge/orbital ordering transition, and paramagnetic-ferromagnetic transition are suppressed by the compressive strain. Consequently, the related electronic and magnetic transition temperatures decrease with an increase in the compressive strain. The present results can be explained by the strain-controlled lattice deformation and the consequent orbital occupation. It indicates that the lattice degree of freedom is crucial for understanding the transport and magnetic properties of the strongly correlated LaMnO3+δ.

Structure, Electrical and Magnetic Properties of Thin Films of La1−xMxMnO3 on Si

1999 ◽  
Vol 562 ◽  
Author(s):  
N. N. Mateeva ◽  
P. C. Hogan ◽  
K. H. Dahmen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Transition Temperature ◽  
Buffer Layers ◽  
Ferromagnetic Transition ◽  
Electrical And Magnetic Properties ◽  
Insulator Metal Transition ◽  
Composition Structure

ABSTRACTThin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.

scholarly journals The electronic and magnetic properties of strained La0.85Zr0.15MnO3films

2014 ◽  
Vol 70 (a1) ◽  
pp. C225-C225
Author(s):  
N. G. Deshpande ◽  
C. H. Weng ◽  
Y. F. Wang ◽  
Y. C. Shao ◽  
D. C. Ling ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Circular Dichroism ◽  
Magnetic Transition ◽  
Linear Dichroism ◽  
Orbital Ordering ◽  
Magnetic Transition Temperature ◽  
Edge Structure ◽  
X Ray ◽  
Electronic And Magnetic Properties

The electronic and magnetic properties of strained tetravalent-ion-doped La0.85Zr0.15MnO3 (LZMO) thin films that were epitaxially grown on SrTiO3 (STO) and MgO substrates were studied using temperature-dependent x-ray diffraction (XRD), x-ray absorption near-edge structure (XANES), x-ray linear dichroism (XLD) and x-ray magnetic circular dichroism (XMCD) at the Mn L3,2- and K-edge. XRD studies reveal that the LZMO thin films have compressive and tensile strains on the STO and MgO substrates, respectively. As temperature is reduced from room temperature to below magnetic transition temperature, the preferentially occupied Mn majority-spin eg orbital changes from the in-plane dx2-y2 to the out-of-plane d3z2-r2 orbital for LZMO/STO, and vice versa for LZMO/MgO. Experimental results suggest that the new hopping path that is mediated by the Mn2+ ions triggers a stronger d3z2-r2 orbital ordering of Mn3+ ions and enhances the ferromagnetic coupling between the Mn spin moments of t2g electrons in LZMO/STO, whereas the tensile strain stabilizes the dx2-y2 orbital by inducing lattice distortions of the MnO6 octahedra in LZMO/MgO.

scholarly journals CVD of CrO2 Thin Films: Influence of the Deposition Parameters on their Structural and Magnetic Properties

2006 ◽  
Vol 514-516 ◽  
pp. 284-288 ◽  
Author(s):  
Ana F.S. Mota de Oliveira ◽  
António J. Silvestre ◽  
Pedro M. Sousa ◽  
Olinda Conde ◽  
M. Alexandra Rosa ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Saturation Magnetization ◽  
Atmospheric Pressure ◽  
Chromium Trioxide ◽  
Magnetic Transition ◽  
Deposition Parameters ◽  
Structural And Magnetic Properties

This work reports on the synthesis of CrO2 thin films by atmospheric pressure CVD using chromium trioxide (CrO3) and oxygen. Highly oriented (100) CrO2 films containing highly oriented (0001) Cr2O3 were grown onto Al2O3(0001) substrates. Films display a sharp magnetic transition at 375 K and a saturation magnetization of 1.92 µB/f.u., close to the bulk value of 2 µB/f.u. for the CrO2.

Control of the charge/orbital ordering transition in epitaxial La7/8Sr1/8MnO3thin films through compressive strain

2012 ◽  
Vol 45 (17) ◽  
pp. 175002 ◽  
Author(s):  
Ling Hu ◽  
Zhigao Sheng ◽  
Xinbo Hu ◽  
Ranran Zhang ◽  
Bo Wang ◽  
...  
Keyword(s):  
Compressive Strain ◽  
Orbital Ordering ◽  
Ordering Transition

MAGNETIC TRANSITION IN QUASI ONE DIMENSIONAL WIRES AND THIN FILMS OF GADOLINIUM

1993 ◽  
Vol 07 (01n03) ◽  
pp. 496-499
Author(s):  
NAUSHAD ALI ◽  
J. T. MASDEN ◽  
PEGGY HILL ◽  
ARTHUR CHIN
Keyword(s):  
Thin Films ◽  
Magnetic Transition ◽  
High Vacuum ◽  
Magnetic Ordering ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Ferromagnetic Transition ◽  
Sharp Drop ◽  
Cross Sectional ◽  
Thin Wires

Thin wires of gadolinium metal have been fabricated using a step lithographic technique with cross-sectional areas from 0.87 × 10−11 cm 2 to 58 × 10−11 cm 2. The thin films of gadolinium were deposited in a ultra high vacuum system by thermal evaporation with the thickness of films in the range 200Å to 1200Å. Resistivity data of Gd thin wires does not show evidence of bulk transition at T c ≈ 293 K (bulk) at all. However, a phase transition manifested as a sharp drop in resistivity of Gd thin wires is observed around 20 K. Thin films of Gd deposited on glass and sapphire substrates were used to measure the magnetic properties using a SQUID magnetometer. Films of thickness > 500Å show ferromagnetic transition around 290 K (close to bulk) and a small peak in the magnetization around 20 K is also observed. For Gd films of thickness ~ 200Å there is no evidence of ferromagnetic transition, however, the magnetization data clearly shows a peak in the neighborhood of 20 K. It appears that in the case of very thin films and thin wires of Gd we are observing a magnetic transition around 20 K. This transition may be due to magnetic ordering of the surface which has a transition temperature much smaller than the bulk ferromagnetic T c of 293 K.

The Effect of Elastic Strain on the Electrical and Magnetic Properties of Epitaxial Ferromagnetic SrRuO3 Thin Films

1997 ◽  
Vol 494 ◽  
Author(s):  
Q. Gan ◽  
R. A. Rao ◽  
J. L. Garrett ◽  
Mark Lee ◽  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Elastic Strain ◽  
Compressive Strain ◽  
Strain Effect ◽  
Epitaxial Thin Films ◽  
Saturation Magnetic Moment ◽  
Electrical And Magnetic Properties ◽  
Lift Off ◽  
Property Changes

ABSTRACTWe report the direct measurement of elastic strain effect on the electrical and magnetic properties of single domain epitaxial SrRuO3 thin films, using a lift-off technique. The as-grown films on vicinal (001) SrTiO3 substrates are subjected to elastic biaxial compressive strain within the plane and tensile strain normal to the plane. In contrast, the lift-off films prepared by chemical etching of SrTiO3 substrates, are completely strain free with bulk like lattice. Our measurements indicate that the elastic strain can significantly affect the electrical and magnetic properties of epitaxial ferromagnetic SrRuO3 thin films. For the strained films, the Curie temperature (Tc) was suppressed to 150K and the saturation magnetic moment (Ms) was decreased to 1.15μB/Ru atom as compared to a Tc of 160K and Ms of 1.45μB/Ru atom for the strain free films. These property changes are attributed to the structural distortion due to the elastic strain in the as-grown epitaxial thin films. Our results provide direct evidence of the crucial role of lattice strain in determining the properties of the perovskite epitaxial thin films.

scholarly journals Control of Magnetic Properties of Barium Ferrite Thin Films With Unusual Valence Fe

2021 ◽  
Vol 8 ◽  
Author(s):  
Masahiro Sakuda ◽  
Hiroyasu Yamahara ◽  
Hitoshi Tabata ◽  
Munetoshi Seki
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Low Temperature ◽  
Perovskite Structure ◽  
Magnetic Transition ◽  
Ferromagnetic Behavior ◽  
X Ray Diffraction ◽  
Ionic Ratio ◽  
Magnetic Transition Temperature ◽  
Temperature Oxidation

Thin films of BaFe1-xMxO3 (M = Hf, Zr, and Ce; 0.0 ≤ x ≤ 0.75) were fabricated using pulsed laser deposition and their magnetic properties were investigated. X-ray diffraction analysis indicated that oxygen-deficient BaFeOx (x < 3.0) with a monoclinic structure was formed when the deposition was conducted using a non-substituted target (x = 0.0). The as-grown BaFeOx films were converted into fully oxidized BaFeO3 with a perovskite structure by low-temperature oxidation in an ozone atmosphere. In contrast, the as-deposited films of Hf, Zr, and Ce-substituted films exhibited a perovskite structure, and their crystallinity did not change after low-temperature ozone annealing. The magnetic transition temperature Tc of the BaFeO3 film was 115 K, whereas the substituted BaFeO3 films showed ferromagnetic behavior even at 300 K. These results can be attributed to the weakening of the antiferromagnetic super-exchange coupling among Fe ions owing to the lattice expansion in the substituted BaFeO3. In addition, the magnetization of the films was found to increase with the decreasing ionic ratio of Fe4+/Fe3+, suggesting that the inherent carrier-induced ferromagnetic interaction is dominant in the films.

Effect of Fe Doping on the Structural, Electrical and Magnetic Properties of Perovskite La0.7Ca0.3Mn1-xFexO 3 (X = 0, 0.01, 0.03 and 0.05)

2021 ◽  
Vol 317 ◽  
pp. 10-16
Author(s):  
Nor Azah Nik-Jaafar ◽  
Roslan Abd-Shukor ◽  
Muhammad Aizat Kamarudin
Keyword(s):  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
Xrd Analysis ◽  
Ferromagnetic Transition ◽  
Fe Doping ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Electrical And Magnetic Properties ◽  
Insulator Metal Transition ◽  
Fe Substitution

The effect of Fe-substitution at the Mn-site in La0.7Ca0.3Mn1-xFexO3 (x = 0, 0.01, 0.03 and 0.05) on its structure, electrical and magnetic properties has been studied. These properties were investigated via X-ray diffraction (XRD) analysis, temperature-dependent resistance measurements and temperature-dependent AC magnetic susceptibility measurements. XRD analysis showed all samples are single phase materials. Temperature dependent resistance measurements between 30–300 K showed all samples to undergo insulator-metal transition as temperature decreases. Increase in Fe doping for x = 0, 0.01, 0.03 and 0.05 caused the transition temperature TIM to decrease from 257 K, 244 K, 205 K and 162 K respectively. The magnetic susceptibility measurements showed the samples to exhibit paramagnetic to ferromagnetic transition as temperature decreased. Increase in Fe substitution x at the Mn-site progressively decreased the Curie temperature TC from 250 K at x = 0 to 170 K at x = 0.05.

scholarly journals Little volume change in orbital ordering transition in manganite thin films

2010 ◽  
Vol 211 ◽  
pp. 012004 ◽  
Author(s):  
Yusuke Wakabayashi ◽  
Hiroshi Sawa ◽  
Naoko Takubo ◽  
Masao Nakamura ◽  
Yasushi Ogimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Volume Change ◽  
Orbital Ordering ◽  
Ordering Transition
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