scholarly journals A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width

2019 ◽  
Vol 257 (2) ◽  
pp. 1900545
Author(s):  
Jaeyi Chun ◽  
Siwei Li ◽  
Mohamadali Malakoutian ◽  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
First Derivative ◽  
Static Induction Transistor ◽  
Static Induction

scholarly journals A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width

2020 ◽  
Vol 257 (2) ◽  
pp. 2070013
Author(s):  
Jaeyi Chun ◽  
Siwei Li ◽  
Mohamadali Malakoutian ◽  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
First Derivative ◽  
Static Induction Transistor ◽  
Static Induction

Effect of gate insulating layer on organic static induction transistor characteristics

2009 ◽  
Vol 518 (2) ◽  
pp. 514-517 ◽  
Author(s):  
Fanghua Pu ◽  
Yasuyuki Watanabe ◽  
Hiroshi Yamauchi ◽  
Masakazu Nakamura ◽  
Kazuhiro Kudo
Keyword(s):  
Insulating Layer ◽  
Static Induction Transistor ◽  
Static Induction

Temperature properties of the static induction transistor

1981 ◽  
Vol 24 (2) ◽  
pp. 105-107 ◽  
Author(s):  
Piotr Płotka ◽  
Bogdan Wilamowski
Keyword(s):  
Static Induction Transistor ◽  
Static Induction

Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure

2012 ◽  
Vol 55 (4) ◽  
pp. 962-970 ◽  
Author(s):  
YongShun Wang ◽  
JingJing Feng ◽  
ChunJuan Liu ◽  
ZiTing Wang ◽  
ZaiXing Wang ◽  
...  
Keyword(s):  
Gate Structure ◽  
Static Induction Transistor ◽  
Static Induction

scholarly journals Modeling of a GaN Based Static Induction Transistor

1999 ◽  
Vol 4 (S1) ◽  
pp. 697-702 ◽  
Author(s):  
Gabriela E. Bunea ◽  
S.T. Dunham ◽  
T.D. Moustakas
Keyword(s):  
Operating Conditions ◽  
Short Channel ◽  
Flow Equations ◽  
Static Induction Transistors ◽  
Thermal Boundary Conditions ◽  
Heating Effects ◽  
Device Structures ◽  
Static Induction Transistor ◽  
Static Induction ◽  
Voltage Swing

Static induction transistors (SITs) are short channel FET structures which are suitable for high power, high frequency and high temperature applications. GaN has particularly favorable properties for SIT operation. However, such a device has not yet been fabricated. In this paper we report simulation studies on GaN static induction transistors over a range of device structures and operating conditions. The transistor was modeled with coupled drift-diffusion and heat-flow equations. We found that the performance of the device depends sensitively on the thermal boundary conditions, as self-heating effects limit the maximum voltage swing.

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