scholarly journals Time-Resolved Photoluminescence Measurement of Frenkel-type Excitonic Lifetimes in InGaN/GaN Multi-quantum Well Structures

2003 ◽  
Vol 4 (5) ◽  
pp. 19-23
Author(s):  
Gwi-Su Shin ◽  
Sung-Won Hwang ◽  
Keun-Joo Kim
Keyword(s):  
Quantum Well ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Time Resolved Photoluminescence ◽  
Multi Quantum Well

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

Time‐resolved photoluminescence study on AlxGa1−xAs spontaneous vertical quantum well structures

1996 ◽  
Vol 68 (23) ◽  
pp. 3221-3223 ◽  
Author(s):  
Noritaka Usami ◽  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Ryoichi Ito ◽  
Kentaro Onabe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Time Resolved Photoluminescence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Time Resolved Photoluminescence

Optical Properties of Ingan/GaN Multi Quantum Well Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
J. P. Bergman ◽  
N. Saksulv ◽  
J. Dalfors ◽  
P. O. Holtz ◽  
B. Monemar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Rates ◽  
Energy Position ◽  
Electron Hole ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Lower Energy Band ◽  
Time Resolved Photoluminescence ◽  
Multi Quantum Well

AbstractA set of GaN/InGaN multiple quantum wells (QWs) with well thickness 30 Å and barrier thickness 60 Å were grown by MOCVD on sapphire substrates. The n-type Si doping of the InGaN QWs was varied, in order to produce a different electron concentration in the QWs for the different samples. Optical spectra were obtained by time resolved photoluminescence spectroscopy. The data show weak excitonic spectra from the QWs as well as a broad deeper emission with a much stronger intensity. The spectral shape becomes narrower and the energy position shifts to higher energies with increasing doping. The two different emissions are not easily separated in CW or time integrated spectra, but are clearly observed in a time resolved spectral measurement due to their different recombination rates. The deeper emission has a long and non-exponential decay, with an average decay time in the order of several hundred nanoseconds. The higher energy exciton emission has a much faster decay of about 1 ns. The lower energy band is tentatively explained as due to separately localized electron-hole (e-h) pairs in the QW.

Time-resolved photoluminescence ofInxGa1−xN/GaNmultiple quantum well structures: Effect of Si doping in the barriers

2001 ◽  
Vol 64 (24) ◽  
Author(s):  
C. K. Choi ◽  
Y. H. Kwon ◽  
B. D. Little ◽  
G. H. Gainer ◽  
J. J. Song ◽  
...  
Keyword(s):  
Quantum Well ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Si Doping ◽  
Time Resolved Photoluminescence
Sign in / Sign up

Export Citation Format

Share Document