Low-temperature amorphous silicon p-i-n photodiodes

2009 ◽  
Vol 246 (8) ◽  
pp. 1854-1857 ◽  
Author(s):  
Robert A. Street ◽  
William S. Wong ◽  
Rene Lujan
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon

Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.

1985 ◽  
Vol 51 ◽  
Author(s):  
R.G. Elliman ◽  
J.M. Poate ◽  
J.S. Williams ◽  
J.M. Gibson ◽  
D.C. Jacobson ◽  
...  
Keyword(s):  
Phase Separation ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Diffusion Coefficients ◽  
Crystalline Silicon ◽  
Tracer Diffusion ◽  
Separation Processes ◽  
Low Temperature Annealing ◽  
Tracer Diffusion Coefficients ◽  
Concentration Diffusion

ABSTRACTDiffusion, crystallization and phase separation processes in indium implanted amorphous silicon are examined for low temperature annealing (600°C). Both diffusion and crystallization are shown to be extremely sensitive to the indium concentration. Diffusion coefficients more than 10 orders of magnitude higher than tracer diffusion coefficients in crystalline silicon are measured, and amorphous to crystalline silicon transitions at temperatures as low as 350°C are reported. Phase separation is also observed.

The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Ultrafast Laser ◽  
Ultrafast Laser Spectroscopy ◽  
Ultrafast Carrier ◽  
Scattering Time

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.

Hopping conduction in amorphous silicon-chromium films at very low temperature

2014 ◽  
Author(s):  
M. Errai ◽  
A. El Kaaouachi ◽  
H. El Idrissi ◽  
A. Zatni ◽  
A. Narjis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Hopping Conduction ◽  
Chromium Films ◽  
Very Low Temperature

Laser stimulated low-temperature crystallization of amorphous silicon

2006 ◽  
Vol 32 (3) ◽  
pp. 259-261 ◽  
Author(s):  
S. A. Avsarkisov ◽  
Z. V. Jibuti ◽  
N. D. Dolidze ◽  
B. E. Tsekvava
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

1992 ◽  
Vol 242 ◽  
Author(s):  
Sing-Pin Tay ◽  
J. P. Ellul ◽  
Susan B. Hewitt ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Amorphous Silicon Carbide ◽  
Single Precursor ◽  
C Doping ◽  
Low Temperature Process

ABSTRACTA low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.

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