Investigations on the Low-Temperature Transitions and Time Effects of Branched Polyethylene by the Positron Lifetime Technique

1987 ◽  
Vol 104 (2) ◽  
pp. 707-713 ◽  
Author(s):  
P. Kindl ◽  
Q. Reiter
2011 ◽  
Vol 248 (6) ◽  
pp. 1453-1458
Author(s):  
N. Laforest ◽  
C. Bas ◽  
J. De Baerdemaeker ◽  
N. Djourelov ◽  
C. Dauwe

2001 ◽  
Vol 363-365 ◽  
pp. 159-162 ◽  
Author(s):  
Eiichi Kuramoto ◽  
Fuminobu Hori ◽  
M. Ohmura ◽  
M. Takenaka

1991 ◽  
Vol 44 (11) ◽  
pp. 5510-5517 ◽  
Author(s):  
S. Mäkinen ◽  
H. Rajainmäki ◽  
S. Linderoth

1976 ◽  
Vol 55 (7) ◽  
pp. 398-400 ◽  
Author(s):  
M. Fishbein ◽  
K.F. Canter

1942 ◽  
Vol 15 (4) ◽  
pp. 826-834 ◽  
Author(s):  
J. R. Scott

Abstract A hypothesis is put forward to explain the plastic-elastic behavior of ebonite and its dependence on temperature. This is based on the previously described mechanical conception of ebonite as a system comprising a heat-stable elastic phase and a viscous temperature-sensitive phase, but the difficulty of reconciling this two-phase concept with the probable structure of ebonite is avoided by replacing the elastic and viscous phases respectively by primary and secondary (cohesional) bonds, the relaxation of the latter, due to their relatively low temperature-stability, being responsible for all time effects in the deformation of ebonite. The hypothesis explains the main facts relating to so-called plastic yield and to the residual strain after recovery from deformation, and thus appears to form a useful basis for further research on ebonite.


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Florian Judée ◽  
Céline Fongia ◽  
Bernard Ducommun ◽  
Mohammed Yousfi ◽  
Valérie Lobjois ◽  
...  

1993 ◽  
Vol 327 ◽  
Author(s):  
A. A. Rempel ◽  
H. -E. Schaefer ◽  
M. Forster ◽  
A.I. Girka

AbstractNonstoichiometric defects in carbides of the Group IV and V transition metals and radiation-induced atomic defects in SiC were studied by positron lifetime measurements before and after low-temperature (80 K) electron irradiation and subsequent thermal annealing up to 1900 K. Agglomeration of radiation-induced atomic defects which strongly depends on the energy of the irradiation electrons and subsequent decay of the agglomerates in SiC is observed.


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