A refinement upon the method of evaluating the density of localized states from the field effect

1982 ◽  
Vol 70 (2) ◽  
pp. K181-K183
Author(s):  
J. Gazsó
Keyword(s):  
Field Effect ◽  
Localized States ◽  
Density Of Localized States

scholarly journals Two-Dimensional Carrier Distribution in Top-Gate Polymer Field-Effect Transistors: Correlation between Width of Density of Localized States and Urbach Energy

2013 ◽  
Vol 26 (5) ◽  
pp. 728-733 ◽  
Author(s):  
Auke J. Kronemeijer ◽  
Vincenzo Pecunia ◽  
Deepak Venkateshvaran ◽  
Mark Nikolka ◽  
Aditya Sadhanala ◽  
...  
Keyword(s):  
Field Effect ◽  
Urbach Energy ◽  
Field Effect Transistors ◽  
Localized States ◽  
Two Dimensional ◽  
Carrier Distribution ◽  
Density Of Localized States

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

HOPPING CONDUCTION IN POLYMERS

1994 ◽  
Vol 08 (07) ◽  
pp. 847-854 ◽  
Author(s):  
Heinz Bässler
Keyword(s):  
Charge Transport ◽  
Carrier Mobility ◽  
Localized States ◽  
Time Dependent ◽  
Hopping Conduction ◽  
Moderate Degree ◽  
Density Of Localized States ◽  
Temporal Features ◽  
Gaussian Density ◽  
Energetic Disorder

The concept of hopping within a Gaussian density of localized states introduced earlier to rationalize charge transport in random organic photoconductors is developed further to account for temporal features of time of flight (TOF) signals. At moderate degree of energetic disorder (σ/kT~3.5…4.5) there is a transport regime intermediate between dispersive and quasi-Gaussian type whose signatures are (i) universal TOF signals that can appear weakly dispersive despite yielding a well defined carrier mobility and (ii) an asymmetric propagator of the carrier packet yielding a time dependent diffusivity.

Density of Deep Bandgap States in Amorphous Silicon From the Temperature Dependence of Thin Film Transistor Current

1994 ◽  
Vol 336 ◽  
Author(s):  
T. Globus ◽  
H. C. Slade ◽  
M. Shur ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Energy Gap ◽  
Localized States ◽  
Flat Band ◽  
Gate Bias ◽  
Density Of Localized States ◽  
Wide Range

ABSTRACTWe have measured the current-voltage characteristics of amorphous silicon thin film transistors (a-Si TFTs) over a wide range of temperatures (20 to 160°C) and determined the activation energy of the channel current as a function of gate bias with emphasis on the leakage current and subthreshold regimes. We propose a new method for estimating the density of localized states (DOS) from the dependence of the derivative of activation energy with respect to gate bias. This differential technique does not require knowledge of the flat-band voltage (VFB) and does not incorporate integration over gate bias. Using this Method, we have characterized the density of localized states with energies in the range 0.15–1.2 eV from the bottom of the conduction band and have found a wide peak in the DOS in the range of 0.8–0.95 eV below the conduction band. We have also observed that the DOS peak in the lower half of the bandgap increases in magnitude and shifts towards the conduction band as a result of thermal and bias stress. We also measured an overall increase in the DOS in the upper half of the energy gap and an additional peak, centered at 0.2 eV below the conduction band, which appear due to the applied stress. These results are in qualitative agreement with the defect pool Model [1,2].

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