Density of localized states-Effect of the next-nearest neighbour interaction

2009 ◽  
Vol 12 (S11) ◽  
pp. 573-581
Author(s):  
Maria Stȩślicka ◽  
E. R. Smith
Keyword(s):  
Localized States ◽  
Nearest Neighbour ◽  
Density Of Localized States ◽  
Neighbour Interaction

scholarly journals Undecidability in quantum thermalization

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Naoto Shiraishi ◽  
Keiji Matsumoto
Keyword(s):  
Turing Machine ◽  
Thermal Equilibrium ◽  
General Theorem ◽  
Nearest Neighbour ◽  
Many Body ◽  
Initial State ◽  
One Dimensional ◽  
Universal Turing Machine ◽  
Many Body Systems ◽  
Neighbour Interaction

AbstractThe investigation of thermalization in isolated quantum many-body systems has a long history, dating back to the time of developing statistical mechanics. Most quantum many-body systems in nature are considered to thermalize, while some never achieve thermal equilibrium. The central problem is to clarify whether a given system thermalizes, which has been addressed previously, but not resolved. Here, we show that this problem is undecidable. The resulting undecidability even applies when the system is restricted to one-dimensional shift-invariant systems with nearest-neighbour interaction, and the initial state is a fixed product state. We construct a family of Hamiltonians encoding dynamics of a reversible universal Turing machine, where the fate of a relaxation process changes considerably depending on whether the Turing machine halts. Our result indicates that there is no general theorem, algorithm, or systematic procedure determining the presence or absence of thermalization in any given Hamiltonian.

Specific heat of ordered and isotopically disordered lattices

1978 ◽  
Vol 56 (10) ◽  
pp. 1390-1394
Author(s):  
K. P. Srivastava
Keyword(s):  
Specific Heat ◽  
Low Temperatures ◽  
Numerical Study ◽  
Three Dimensional ◽  
Constant Volume ◽  
Nearest Neighbour ◽  
Two Dimensional ◽  
Appreciable Difference ◽  
Substantial Change ◽  
Neighbour Interaction

An extensive numerical study on specific heat at constant volume (Cv) for ordered and isotopically disordered lattices has been made. Cv at various temperatures for ordered and disordered linear and two-dimensional lattices have been compared and no appreciable difference in Cv between these two structures has been observed. Effect of concentration of light atoms on Cv for three-dimensional isotopically disordered lattices has also been shown.In spite of taking next-nearest-neighbour interaction into account, no substantial change in Cv between the ordered and isotopically disordered linear lattices has been found. It is shown that the low lying modes contribute substantially at low temperatures.

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

scholarly journals Nearest-neighbour interaction from an Abelian symmetry and deviations from Hermiticity

2010 ◽  
Vol 690 (1) ◽  
pp. 62-67 ◽  
Author(s):  
G.C. Branco ◽  
D. Emmanuel-Costa ◽  
C. Simões
Keyword(s):  
Nearest Neighbour ◽  
Neighbour Interaction

HOPPING CONDUCTION IN POLYMERS

1994 ◽  
Vol 08 (07) ◽  
pp. 847-854 ◽  
Author(s):  
Heinz Bässler
Keyword(s):  
Charge Transport ◽  
Carrier Mobility ◽  
Localized States ◽  
Time Dependent ◽  
Hopping Conduction ◽  
Moderate Degree ◽  
Density Of Localized States ◽  
Temporal Features ◽  
Gaussian Density ◽  
Energetic Disorder

The concept of hopping within a Gaussian density of localized states introduced earlier to rationalize charge transport in random organic photoconductors is developed further to account for temporal features of time of flight (TOF) signals. At moderate degree of energetic disorder (σ/kT~3.5…4.5) there is a transport regime intermediate between dispersive and quasi-Gaussian type whose signatures are (i) universal TOF signals that can appear weakly dispersive despite yielding a well defined carrier mobility and (ii) an asymmetric propagator of the carrier packet yielding a time dependent diffusivity.

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