On the role of chlorine in the passivation of MOS structures

1979 ◽  
Vol 53 (2) ◽  
pp. 659-664 ◽  
Author(s):  
W. Wroński
Keyword(s):  
Mos Structures

The Role of Metallic Impurities in the Field-Enhanced Carrier Generation in MOS Structures

1996 ◽  
Vol 154 (2) ◽  
pp. 599-605 ◽  
Author(s):  
P. Peykov ◽  
T. Diaz ◽  
H. Juárez ◽  
R. Castanedo
Keyword(s):  
Carrier Generation ◽  
Mos Structures ◽  
Metallic Impurities

The role of HCl in the passivation of MOS structures

1972 ◽  
Vol 13 (1) ◽  
pp. 11-14 ◽  
Author(s):  
R.J. Kriegler
Keyword(s):  
Mos Structures

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Open Physics ◽  
2011 ◽  
Vol 9 (1) ◽  
Author(s):  
Peter Hockicko ◽  
Peter Bury ◽  
Peter Sidor ◽  
Hikaru Kobayashi ◽  
Masao Takahashi ◽  
...  
Keyword(s):  
Deep Level ◽  
Annealing Treatment ◽  
Interface States ◽  
Acid Oxidation ◽  
Electrical Measurements ◽  
External Bias ◽  
Transient Spectroscopy ◽  
Mos Structures ◽  
Dlts Spectra

AbstractA set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U ac - V G curves). By comparing the A-DLTS spectra, U ac - V G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

scholarly journals Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures

2016 ◽  
Vol 06 (01) ◽  
pp. 1650001 ◽  
Author(s):  
Chaitali Chakraborty ◽  
Chayanika Bose
Keyword(s):  
Oxide Semiconductor ◽  
Internal Electric Field ◽  
Interface Traps ◽  
Gold Nanocrystals ◽  
Simulation Tools ◽  
Voltage Curve ◽  
Capacitance Voltage ◽  
Mos Structures ◽  
Mos Device

The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal–oxide–semiconductor (MOS) structures is reported in this communication. The size and position of the NCs are varied and study is made using Sentaurus TCAD simulation tools. In a single NC-layered MOS structure, the role of NCs is more prominent when they are placed closer to SiO2/Si[Formula: see text]substrate interface than to SiO2/Al–gate interface. In MOS structures with larger NC dots and double layered NCs, the charge storage capacity is increased due to charging of the dielectric in the presence of NCs. Higher breakdown voltage and smaller leakage current are also obtained in the case of dual NC-layered MOS device. A new phenomenon of smearing out of the capacitance–voltage curve is observed in the presence of dual NC layer indicating generation of interface traps. An internal electric field developed between these two charged NC layers is expected to generate such interface traps at the SiO2/Si interface.

Role of dactinomycin in the improved survival of children with Wilms' tumor

JAMA ◽  
1966 ◽  
Vol 195 (12) ◽  
pp. 1005-1009 ◽  
Author(s):  
D. J. Fernbach
Keyword(s):  
Wilms Tumor

Role of the allergist in diagnosis and management of patients with uveitis

JAMA ◽  
1966 ◽  
Vol 195 (3) ◽  
pp. 167-172 ◽  
Author(s):  
T. E. Van Metre
Keyword(s):  
Diagnosis And Management

The power of norms to sway fused group members

2018 ◽  
Vol 41 ◽  
Author(s):  
Winnifred R. Louis ◽  
Craig McGarty ◽  
Emma F. Thomas ◽  
Catherine E. Amiot ◽  
Fathali M. Moghaddam
Keyword(s):  
Evolutionary Anthropology ◽  
Normative Systems ◽  
Violent Extremism ◽  
Identity Fusion ◽  
Group Members

AbstractWhitehouse adapts insights from evolutionary anthropology to interpret extreme self-sacrifice through the concept of identity fusion. The model neglects the role of normative systems in shaping behaviors, especially in relation to violent extremism. In peaceful groups, increasing fusion will actually decrease extremism. Groups collectively appraise threats and opportunities, actively debate action options, and rarely choose violence toward self or others.

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