scholarly journals Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

2020 ◽  
Vol 217 (8) ◽  
pp. 2070030
Author(s):  
David Lehninger ◽  
Ricardo Olivo ◽  
Tarek Ali ◽  
Maximilian Lederer ◽  
Thomas Kämpfe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Zirconium Oxide ◽  
Oxide Formation ◽  
Temperature Furnace

scholarly journals Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

2020 ◽  
Vol 217 (8) ◽  
pp. 1900840 ◽  
Author(s):  
David Lehninger ◽  
Ricardo Olivo ◽  
Tarek Ali ◽  
Maximilian Lederer ◽  
Thomas Kämpfe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Zirconium Oxide ◽  
Oxide Formation ◽  
Temperature Furnace

Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (86) ◽  
pp. 45742-45748 ◽  
Author(s):  
Byeong-Geun Son ◽  
So Yeon Je ◽  
Hyo Jin Kim ◽  
Jae Kyeong Jeong
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Zirconium Oxide ◽  
High Performance ◽  
Gate Insulator ◽  
Indium Zinc Oxide

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Low temperature solution processed high-κ zirconium oxide gate insulator by Broadband-UV annealing

2018 ◽  
Vol 57 ◽  
pp. 341-344 ◽  
Author(s):  
Dongping Wang ◽  
Jiangang Lu ◽  
Yongseon Jeon ◽  
Shihong Ouyang ◽  
Yingtao Xie ◽  
...  
Keyword(s):  
Low Temperature ◽  
Zirconium Oxide ◽  
Gate Insulator ◽  
Solution Processed ◽  
Temperature Solution

Low temperature flash light curing of spray coated zirconium oxide gate dielectric for flexible, fully patterned and low voltage operated organic thin film transistor

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1273-1278
Author(s):  
Sudipta K. Sarkar ◽  
Dipti Gupta
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Zirconium Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Flexible Substrate ◽  
Shadow Mask ◽  
Zirconium Complex ◽  
Organic Thin Film ◽  
Light Curing

ABSTRACTIn this work, we present low temperature flash light based curing of spray coated high-k zirconium oxide (ZrOx) thin film to realize low voltage operated flexible and fully patterned organic thin film transistors (OTFTs). A simple sol-gel technique was followed to prepare ZrOx from a zirconium complex. By spraying the precursor solution onto substrate through shadow mask, a patterned film was obtained. On the other hand subsequent flash light curing of the coated film not only reduced processing time but also allowed us to fabricate device on polymeric flexible substrate. Spectroscopic analysis confirmed formation of ZrOx film from the solution of zirconium complex. Finally as prepared ZrOx was used as gate dielectric layer in OTFT structure to keep operating voltage as low as -3V. Flexible polyethylenetrephthalate (PET) sheet was used as flexible substrate and pentacene was used as organic active layer. Each and every layer was deposited through metal made shadow mask to develop fully patterned OTFT. Field effect mobility and ON/OFF ratio of as fabricated transistor was found to be as high as 1.2 cm2V-1S-1 and 105 respectively.

Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion

2000 ◽  
Vol 610 ◽  
Author(s):  
Omer Dokumaci ◽  
Paul Ronsheim ◽  
Suri Hegde ◽  
Dureseti Chidambarrao ◽  
Lahir Shaik-Adam ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Diffusion ◽  
High Nitrogen ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
High Boron ◽  
Buried Layer ◽  
Higher Doses ◽  
Low Nitrogen ◽  
Temperature Furnace

AbstractThe effect of nitrogen implants on boron transient enhanced diffusion was studied for nitrogen-only, boron-only, and boron plus nitrogen implants. A boron buried layer was used as a detector for interstitial supersaturation in the samples. Boron dose ranged from 1×1014 to 1×1015 cm−2 and N2+ dose from 5×1013 and 5×1014 cm−2. The energies were chosen such that the location of the nitrogen and boron peaks matched. After the implants, RTA and low temperature furnace anneals were carried out. The diffusivity enhancements were extracted from the buried layer profiles by simulation. Nitrogen-only implants were found to cause significant enhanced diffusion on the buried boron layer. For lower doses, the enhancement of the nitrogen implant is about half as that of boron whereas the enhancements are equal at higher doses. Nitrogen coimplant with boron increases the transient enhanced diffusion of boron at low boron doses, which implies that nitrogen does not act as a strong sink for excess interstitials unlike carbon. At high boron doses, nitrogen co-implant does not significantly change boron diffusion. Sheet resistance measurements indicate that low nitrogen doses do not affect the activation of boron whereas high nitrogen doses either reduce the activation of boron or the mobility of the holes.

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