Carrier Transport in Graphene Field‐Effect Transistors on Gated Polar Nitride Substrates

2020 ◽  
Vol 217 (16) ◽  
pp. 1900949
Author(s):  
Krishna Balasubramanian ◽  
Hareesh Chandrasekar ◽  
Srinivasan Raghavan
Keyword(s):  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors

Reconfigurable horizontal–vertical carrier transport in graphene/HfZrO field-effect transistors

2019 ◽  
Vol 31 (2) ◽  
pp. 025203 ◽  
Author(s):  
Mircea Dragoman ◽  
Mircea Modreanu ◽  
Ian M Povey ◽  
Adrian Dinescu ◽  
Daniela Dragoman
Keyword(s):  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors

Heterogeneous Nucleation Promotes Carrier Transport in Solution-Processed Organic Field-Effect Transistors

2012 ◽  
Vol 23 (3) ◽  
pp. 291-297 ◽  
Author(s):  
Ruipeng Li ◽  
Hadayat Ullah Khan ◽  
Marcia M. Payne ◽  
Detlef-M. Smilgies ◽  
John E. Anthony ◽  
...  
Keyword(s):  
Heterogeneous Nucleation ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

Extrinsic limiting factors of carrier transport in organic field-effect transistors

2008 ◽  
Vol 95 (1) ◽  
pp. 73-80 ◽  
Author(s):  
Masakazu Nakamura ◽  
Hirokazu Ohguri ◽  
Naoyuki Goto ◽  
Hiroshi Tomii ◽  
Mingsheng Xu ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Limiting Factors ◽  
Organic Field Effect Transistors

scholarly journals Improved charge carrier transport in ultrathin poly(3-hexylthiophene) films via solution aggregation

2016 ◽  
Vol 4 (48) ◽  
pp. 11488-11498 ◽  
Author(s):  
Lukasz Janasz ◽  
Dorota Chlebosz ◽  
Marzena Gradzka ◽  
Wojciech Zajaczkowski ◽  
Tomasz Marszalek ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Ultrathin Films ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Charge Carrier Transport ◽  
Maximum Charge ◽  
Solution Aggregation

Field-effect transistors based on poly(3-hexylthiophene) (P3HT) ultrathin films exhibit maximum charge carrier mobilities of up to 0.1 cm2 V−1 s−1.

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors

2016 ◽  
Vol 28 (43) ◽  
pp. 9519-9525 ◽  
Author(s):  
Inyeal Lee ◽  
Servin Rathi ◽  
Dongsuk Lim ◽  
Lijun Li ◽  
Jinwoo Park ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Electron Carrier ◽  
Dual Channel
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