Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors
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2012 ◽
Vol 23
(3)
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pp. 291-297
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2012 ◽
Vol 51
(2S)
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pp. 02BF02
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2011 ◽
Vol 507
(1-3)
◽
pp. 195-198
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