Production of p-Type Si/n-Type β-FeSi2 Heterojunctions Using Facing-Targets Direct-Current Sputtering and Evaluation of Their Resistance and Interface State Density

2018 ◽  
Vol 215 (20) ◽  
pp. 1701022 ◽  
Author(s):  
Rawiwan Chaleawpong ◽  
Nathaporn Promros ◽  
Peerasil Charoenyuenyao ◽  
Adison Nopparuchikun ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Direct Current ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
P Type ◽  
Direct Current Sputtering

Interface State Density and Series Resistance of n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering

2018 ◽  
Vol 18 (3) ◽  
pp. 1841-1846 ◽  
Author(s):  
Phongsaphak Sittimart ◽  
Asanlaya Duangrawa ◽  
Peeradon Onsee ◽  
Sakmongkon Teakchaicum ◽  
Adison Nopparuchikun ◽  
...  
Keyword(s):  
Direct Current ◽  
Series Resistance ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
P Type ◽  
Direct Current Sputtering

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Interface State Density Evaluation of p-Type and n-Type Ge/GeNxStructures by Conductance Technique

2015 ◽  
Vol 98 (6) ◽  
pp. 8-15
Author(s):  
TAKURO IWASAKI ◽  
TOSHIRO ONO ◽  
YOHEI OTANI ◽  
YUKIO FUKUDA ◽  
HIROSHI OKAMOTO
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

2013 ◽  
Vol 34 (5) ◽  
pp. 052002 ◽  
Author(s):  
Jiahong Zhang ◽  
Qingquan Liu ◽  
Yixian Ge ◽  
Fang Gu ◽  
Min Li ◽  
...  
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Type Silicon ◽  
P Type

Au Ohmic Contacts to P-Type Hg1-xCdxte Utilizing Thin Interfacial Layers

1990 ◽  
Vol 181 ◽  
Author(s):  
V. Krishnamurthy ◽  
A. Simmons ◽  
C. R. Helms
Keyword(s):  
Interfacial Layer ◽  
Ohmic Contacts ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interfacial Chemistry ◽  
Interfacial Layers ◽  
Ohmic Behavior ◽  
P Type ◽  
Thin Plasma

ABSTRACTOhmic behavior is observed in electroless Au contacts to p -type Hg1−xCdxTe. Our investigation of the interfacial chemistry of such contacts suggest that this ohmic behavior may be due to the presence of a Te,O, and CI layer. To verify this correlation with interfacial chemistry, thin plasma oxide layers were used in evaporated Au contacts. The annealed plasma oxidized contacts exhibited low contact resistances. This behavior was attributed to a low interface state density at the interfacial layer/Hg1−xCdxTe interface. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.

scholarly journals Interface-state density estimation of n-type nanocrystalline FeSi 2 /p-type Si heterojunctions fabricated by pulsed laser deposition

2017 ◽  
Vol 8 (3) ◽  
pp. 035016
Author(s):  
Adison Nopparuchikun ◽  
Nathaporn Promros ◽  
Phongsaphak Sittimart ◽  
Peeradon Onsee ◽  
Asanlaya Duangrawa ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Density Estimation ◽  
Pulsed Laser ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Laser Deposition ◽  
P Type

Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

1996 ◽  
Vol 69 (2) ◽  
pp. 230-232 ◽  
Author(s):  
Zhi Chen ◽  
Dae‐Gyu Park ◽  
Francke Stengal ◽  
S. Noor Mohammad ◽  
Hadis Morkoç
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
P Type

Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

2006 ◽  
Vol 527-529 ◽  
pp. 1525-1528
Author(s):  
W. Huang ◽  
T. Khan ◽  
T. Paul Chow
Keyword(s):  
Density Distribution ◽  
Valence Band ◽  
Conduction Band ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Plasma Enhanced Cvd ◽  
P Type

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.

Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices

2012 ◽  
Vol 717-720 ◽  
pp. 709-712 ◽  
Author(s):  
Shuji Katakami ◽  
Manabu Arai ◽  
Kensuke Takenaka ◽  
Yoshiyuki Yonezawa ◽  
Hitoshi Ishimori ◽  
...  
Keyword(s):  
Interfacial Properties ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Promising Method ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Mos Devices ◽  
Inversion Channel ◽  
P Type

We investigated the effect of post-oxidation annealing in wet O2 and N2O ambient, following dry O2 oxidation on the SiC MOS interfacial properties by using p-type MOS capacitors. The interfacial properties were dramatically improved by the introduction of hydrogen or nitrogen atoms into the SiO2/SiC interface, in each POA process. Notably, the N2O-POA process at 1200 °C or higher reduced the interface state density more effectively than the wet-O2-POA process, and offers a promising method to further improve the inversion channel mobility of p-channel SiC MOS devices.

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