Structural, electrical, and optical properties of polycrystalline NbO2 thin films grown on glass substrates by solid phase crystallization

2016 ◽  
Vol 214 (3) ◽  
pp. 1600604 ◽  
Author(s):  
Shoichiro Nakao ◽  
Hideyuki Kamisaka ◽  
Yasushi Hirose ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Electrical And Optical Properties ◽  
Glass Substrates

Effect of Substrate Temperature on the Opto-Electrical Propertites of Ti Doped ITO Films Deposited by RF Magnetron Sputtering

2012 ◽  
Vol 602-604 ◽  
pp. 1399-1403
Author(s):  
Rui Xin Ma ◽  
Shi Na Li ◽  
Guo Quan Suo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Absorption Edge ◽  
Blue Shift ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Visible Wavelengths

Ti doped ITO (ITO:Ti) thin films were fabricated on glass substrates by RF magnetron sputtering using only one piece of ITO:Ti ceramic target at different substrate temperature (Ts). The effect of substrate temperature on structural, electrical, and optical properties of the films was investigated. It is confirmed that the resistivity of the films decreases with the increase of Ts till the minimum value of 2.5×10-4 Ω•cm and the transmittance in visible wavelengths is higher than 90%. "Blue shift" and "red shift" of UV absorption edge of the film were observed when Ts200 °CHeaders and footers

Effect of thermal annealing on electrical and optical properties of Ba-doped SrCu2 O2 thin films on glass substrates

2013 ◽  
Vol 210 (12) ◽  
pp. 2569-2574 ◽  
Author(s):  
Afzal Khan ◽  
Carmen Jiménez ◽  
Odette Chaix-Pluchery ◽  
Hervé Roussel ◽  
Jean-Luc Deschanvres
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Electrical And Optical Properties ◽  
Glass Substrates

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method

2014 ◽  
Vol 92 (7/8) ◽  
pp. 723-727 ◽  
Author(s):  
E.A. Baranov ◽  
S.Ya. Khmel ◽  
A.O. Zamchiy ◽  
I.V. Cheskovskaya ◽  
M.R. Sharafutdinov
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Gas Jet ◽  
Solid Phase Crystallization ◽  
Electron Beam Plasma

Solid phase crystallization of amorphous silicon films (a-Si:H) deposited by gas-jet electron beam plasma chemical vapor deposition method and annealed at 700 °C in vacuum has been investigated. This method provides high deposition rates (up to 2.3 nm/s) of a-Si:H thin films in a standard vacuum chamber. The effects of varying the substrate temperature from 190 to 415 °C on the structural and optical properties of the as-deposited amorphous films and postannealed nanocrystalline films have been investigated. The crystallite size was determined by X-ray diffraction (about 5–8 nm) and agrees with that obtained from Raman scattering. The estimated degree of crystallinity was 45%–59%. Optical transmission spectra were recorded to investigate the optical properties and thickness of the silicon thin films. The refractive index and optical band gap data was obtained for both as-deposited amorphous and post-annealed nanocrystalline silicon. The behavior of the refractive index of nanocrystalline silicon depending on the substrate temperature is correlated with the crystalline volume fraction. a-Si:H films obtained at low temperatures have larger crystallite size and better crystallinity after annealing.

Effects of Rapid Thermal Process on the Microstructural, Electrical and Optical Properties of AZO Thin Films

2013 ◽  
Vol 441 ◽  
pp. 11-14
Author(s):  
Rong Bin Liu ◽  
Kai Liang Zhang ◽  
Yu Jie Yuan ◽  
Fang Wang ◽  
Juan Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Processing ◽  
Rf Magnetron Sputtering ◽  
Processing Temperature ◽  
Rapid Thermal Process ◽  
Electrical And Optical Properties ◽  
Pure Nitrogen ◽  
Glass Substrates ◽  
Deposited Films

In this paper, Al-doped ZnO thin films were deposited on glass substrates by RF magnetron sputtering and subsequently rapid thermal processing was executed under temperature range from 300°C to 600°C in order to investigate the microstructure, electrical, and optical properties of AZO films. XRD and AFM microscopy results showed that all the samples were of poly-crystalline and the grain size became larger with the increasing processing temperature. Compared with the sample as-deposited, it was shown that resistivity decreased from 1.9×10-2 to 1.48×10-3Ωcm and carrier concentration increased from 1.48×1020 to 5.59×1020 cm3 when the sample was processed at 600°C in pure nitrogen for 1 min. The highest transmittance of the samples processed at 500°C improves to 90.35% compared with the as-deposited films (68.2% ) as the wavelength varied between 400 and 900 nm.

scholarly journals Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered AmorphousTiO2Films

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
M. Chandra Sekhar ◽  
P. Kondaiah ◽  
B. Radha Krishna ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Optical Transmittance ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Schottky Effect ◽  
Partial Pressures ◽  
Effect Of Oxygen

Titanium dioxide (TiO2) thin films were deposited on p-Si (100) and Corning glass substrates held at room temperature by DC magnetron sputtering at different oxygen partial pressures in the range9×10−3–9×10−2 Pa. The influence of oxygen partial pressure on the structural, electrical, and optical properties of the deposited films was systematically studied. XPS studies confirmed that the film formed at an oxygen partial pressure of6×10−2 Pa was nearly stoichiometric. TiO2films formed at all oxygen partial pressures were X-ray amorphous. The optical transmittance gradually increased and the absorption edge shifted towards shorter wavelengths with the increase of oxygen partial pressure. Thin film capacitors with configuration of Al/TiO2/p-Si have been fabricated. The results showed that the leakage current density of films formed decreased with the increase of oxygen partial pressure to6×10−2Pa owing to the decrease in the oxygen defects in the films thereafter it was increased. The current transport mechanism in the TiO2thin films is shown to be Schottky effect and Fowler-Nordheim tunnelling currents.

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