Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method

2014 ◽  
Vol 92 (7/8) ◽  
pp. 723-727 ◽  
Author(s):  
E.A. Baranov ◽  
S.Ya. Khmel ◽  
A.O. Zamchiy ◽  
I.V. Cheskovskaya ◽  
M.R. Sharafutdinov
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Gas Jet ◽  
Solid Phase Crystallization ◽  
Electron Beam Plasma

Solid phase crystallization of amorphous silicon films (a-Si:H) deposited by gas-jet electron beam plasma chemical vapor deposition method and annealed at 700 °C in vacuum has been investigated. This method provides high deposition rates (up to 2.3 nm/s) of a-Si:H thin films in a standard vacuum chamber. The effects of varying the substrate temperature from 190 to 415 °C on the structural and optical properties of the as-deposited amorphous films and postannealed nanocrystalline films have been investigated. The crystallite size was determined by X-ray diffraction (about 5–8 nm) and agrees with that obtained from Raman scattering. The estimated degree of crystallinity was 45%–59%. Optical transmission spectra were recorded to investigate the optical properties and thickness of the silicon thin films. The refractive index and optical band gap data was obtained for both as-deposited amorphous and post-annealed nanocrystalline silicon. The behavior of the refractive index of nanocrystalline silicon depending on the substrate temperature is correlated with the crystalline volume fraction. a-Si:H films obtained at low temperatures have larger crystallite size and better crystallinity after annealing.

Optical Properties of NiO Thin Films: A Potential Material for Optoelectronic Devices

2012 ◽  
Vol 488-489 ◽  
pp. 103-108 ◽  
Author(s):  
Manisha Tyagi ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Band Gap ◽  
Urbach Energy ◽  
Rf Sputtering ◽  
Blue Shift ◽  
Structural Disorder ◽  
Near Ir

The influence of substrate temperature on the UV-Visible-near-IR optical properties, namely the band gap, the Urbach energy and the refractive index of NiO thin films deposited by RF sputtering has been investigated. The optical band gap of thin films showed the blue-shift in the transmission spectra with increase in the substrate temperature which is related to variation in carrier concentration of the deposited films. Urbach energy (EU) values indicate that the films deposited at 400 oC substrate temperature show least structural disorder. The refractive index of the films is found to decrease continuously with increase in the substrate temperature at all photon energies in the visible and near-IR region, and is attributed to the decreasing packing density of the films. Introduction

The Influence of Substrate Temperature on the Morphological and Optical Properties of ZnTiO3 Thin Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 804 ◽  
pp. 3-7
Author(s):  
Chao Zhan ◽  
Wen Jian Ke ◽  
Xin Ming Li ◽  
Wan Li Du ◽  
Li Juan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Dispersion Model ◽  
Film Surface ◽  
Cubic Phase ◽  
Different Temperatures

Cubic ZnTiO3thin films have been prepared by radio frequency magnetron sputtering on n-type (100) Si substrate at different temperatures. The morphological and optical properties of ZnTiO3films in relation to substrate temperatures are investigated by spectroscopic ellipsometry (SE) and AFM as well as SEM in detail. X-ray diffraction (XRD) measurement shows that all the films have a cubic phase structure and the optimum substrate temperature to form crystalline ZnTiO3thin film is 250 °C. Through SEM and AFM, the particle size in thin films and film surface roughness increase with increasing the substrate temperature. Based on a parameterized TaucLorentz dispersion model, the optical constants and surface roughness of ZnTiO3films related to the substrate temperature are systematically extracted by SE measurement. The surface roughness of the film measured from AFM agrees well with result extracted from SE, which proved that the established SE model is reasonable. With increasing substrate temperature, the refractive index decreases and the main factor in determining the refractive index was deduced to be the surface roughness related to the film packing density. The extinction coefficient of the samples is close to zero, but increases slightly with the increase of the substrate temperature, which is due to the enhancement of scattering effect in the crystalline ZnTiO3film.

Optical properties of plasma-polymerized organosilicone films

1982 ◽  
Vol 60 (5) ◽  
pp. 628-631 ◽  
Author(s):  
M. R. Wertheimer ◽  
J. E. Klemberg-Sapieha ◽  
R. Corriveau
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Measured Data ◽  
Film Deposition ◽  
Lorenz Equation ◽  
Infrared Data

The refractive index, n, of plasma-polymerized hexamethyldisiloxane and -silazane thin films has been measured by ellipsometry at 632.8 nm. For both types of films n was found to increase from about 1.4 to about 1.7, with increasing substrate temperature during film deposition, Ts. Using the Lorentz–Lorenz equation and our previously published density and infrared data for these thin film materials, it is shown that films produced at [Formula: see text] are essentially "inorganic." Calculated n values for hypothetical structures (Si2O)x and (Si2N)x (expected from the "monomer" compositions) agree to within a few percent with measured data.

Study on Optical Properties of Silicon Oxycarbide Thin Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 482-484 ◽  
pp. 1307-1312
Author(s):  
Tao Chen ◽  
Duo Shu Wang
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Rf Magnetron Sputtering ◽  
Silicon Oxycarbide ◽  
Working Pressure ◽  
Sputtering Power

Silicon oxycarbide（SiCO）thin films is a kind of glassy compound materials, which possess many potential excellent properties such as thermal stability, wide energy band, high refractive index and high hardness, and have many potential applications in space. The preparation processes of SiCO thin films by RF magnetron sputtering with different substrate temperature, working pressure and sputtering power were studied. And various surface analysis methods were used to characterize the optical properties of SiCO thin films. The dependence of the properties on the process parameters was also studied. The tested properties of SiCO thin films deposited on K9 glass indicated that lower substrate temperature and sputtering power, higher working pressure could get SiCO thin films with better light penetration and the refractive index of SiCO thin films had a large varying region with the change of the process parameters. With different substrate temperature, working pressure or sputtering power, the maximum refractive index at 633nm（wavelength） are 2.20051, 2.12072 and 1.98959, respectively, and the minimum ones are 1.89426, 1.83176 and 1.8052, respective.

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