Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films

2016 ◽  
Vol 213 (12) ◽  
pp. 3142-3149 ◽  
Author(s):  
Mehmet Karaman ◽  
Özge Tüzün Özmen ◽  
Salar Habibpur Sedani ◽  
Engin Özkol ◽  
Raşit Turan
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Glass Substrate ◽  
Different Content

Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

2021 ◽  
Vol 39 (6) ◽  
pp. 063410
Author(s):  
Xiaolong Zhu ◽  
Jianqiang Wu ◽  
Qimin Hu ◽  
Xia Hao ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Quality ◽  
Znte Thin Films

Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

2013 ◽  
Vol 39 (5) ◽  
pp. 5795-5803 ◽  
Author(s):  
Y.C. Lin ◽  
C.Y. Hsu ◽  
S.K. Hung ◽  
D.C. Wen
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno ◽  
Tio2 Buffer Layer

Vanadium Dioxide Thin Films Deposited on ZnO Buffer Layer for Smart Thermochromic Glazing of Windows

2013 ◽  
Vol 361-363 ◽  
pp. 370-373 ◽  
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to smart windows of high total energy efficiency in architectures or automobiles.

VO2 Thin Films Deposited on ZnO Buffer Layer

2013 ◽  
Vol 734-737 ◽  
pp. 2568-2571
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to ‘‘smart windows’’ of high total energy efficiency in architectures or automobiles. .

Study of the growth mechanism and properties of InN films grown by MOCVD

2003 ◽  
Vol 798 ◽  
Author(s):  
Abhishek Jain ◽  
Joan M. Redwing
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Temperature ◽  
Room Temperature ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Film Morphology ◽  
Buffer Layer Thickness ◽  
Aln Buffer

ABSTRACTThin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40Å) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60Å. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm2/Vs and an electron concentration of 2.1×1019 cm-3 were measured in an approximately 200 nm thick InN layer grown on sapphire.

Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films

2008 ◽  
Vol 254 (21) ◽  
pp. 6766-6769 ◽  
Author(s):  
Shoubin Xue ◽  
Xing Zhang ◽  
Ru Huang ◽  
Huizhao Zhuang
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Buffer Layer

scholarly journals Deposition of SnO2 buffer layer onto commercial conducting glass to be used in thin films solar cells technology

2018 ◽  
Vol 31 (4) ◽  
pp. 63-68
Author(s):  
S Melo ◽  
O Vigil ◽  
C. A. Hernández-Gutiérrez ◽  
F. Pulgarín-Agudelo ◽  
Héctor Mendoza-Leon ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Figure Of Merit ◽  
Transparent Conducting Oxide ◽  
Morphological Properties ◽  
Conductive Glass ◽  
Transparent Conducting ◽  
Sno2 Thin Films

In this work the influence of the deposition of SnO2 buffer layer on the optical, electrical and morphological properties of commercial conducting glasses is presented. Previously the transparent conducting oxide (TCO) were studied in order to determine which is the most appropriate in solar cell applications. The SnO2 thin films were deposited onto glass and commercial conducting glass by pneumatic spray pyrolysis (PSP) and magnetron sputtering techniques and characterized optically and electrically. TCO/buffer bi-layers configuration were processed and characterized through a modified well-known Haccke figure of merit. The results are discussed in terms of considering the usefulness or otherwise of this configuration, depending on the morphological quality of commercial conductive glass in the processing of second-generation solar cells in thin film technology.

scholarly journals Deposition of SnO2 buffer layer onto commercial conducting glass to be used in thin films solar cells technology

2019 ◽  
Vol 31 (4) ◽  
pp. 63-68
Author(s):  
S Melo ◽  
O Vigil ◽  
C. A. Hernández-Gutiérrez ◽  
F. Pulgarín-Agudelo ◽  
Héctor Mendoza-Leon ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Figure Of Merit ◽  
Transparent Conducting Oxide ◽  
Morphological Properties ◽  
Conductive Glass ◽  
Transparent Conducting ◽  
Sno2 Thin Films

In this work the influence of the deposition of SnO2 buffer layer on the optical, electrical and morphological properties of commercial conducting glasses is presented. Previously the transparent conducting oxide (TCO) were studied in order to determine which is the most appropriate in solar cell applications. The SnO2 thin films were deposited onto glass and commercial conducting glass by pneumatic spray pyrolysis (PSP) and magnetron sputtering techniques and characterized optically and electrically. TCO/buffer bi-layers configuration were processed and characterized through a modified well-known Haccke figure of merit. The results are discussed in terms of considering the usefulness or otherwise of this configuration, depending on the morphological quality of commercial conductive glass in the processing of second-generation solar cells in thin film technology.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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