Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

2021 ◽  
Vol 39 (6) ◽  
pp. 063410
Author(s):  
Xiaolong Zhu ◽  
Jianqiang Wu ◽  
Qimin Hu ◽  
Xia Hao ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Quality ◽  
Znte Thin Films

Effects on Structural, Electronic Transport & Optical Properties of Doped & Undoped ZnTe Thin Films for CdTe/CdS Solar Cells

2012 ◽  
Vol 510-511 ◽  
pp. 89-97
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Optical Measurements ◽  
X Ray Diffraction ◽  
Contact Materials ◽  
X Ray ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Znte Thin Films

To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu NO32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.

Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

2013 ◽  
Vol 39 (5) ◽  
pp. 5795-5803 ◽  
Author(s):  
Y.C. Lin ◽  
C.Y. Hsu ◽  
S.K. Hung ◽  
D.C. Wen
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno ◽  
Tio2 Buffer Layer

Vanadium Dioxide Thin Films Deposited on ZnO Buffer Layer for Smart Thermochromic Glazing of Windows

2013 ◽  
Vol 361-363 ◽  
pp. 370-373 ◽  
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to smart windows of high total energy efficiency in architectures or automobiles.

VO2 Thin Films Deposited on ZnO Buffer Layer

2013 ◽  
Vol 734-737 ◽  
pp. 2568-2571
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to ‘‘smart windows’’ of high total energy efficiency in architectures or automobiles. .

Study of the growth mechanism and properties of InN films grown by MOCVD

2003 ◽  
Vol 798 ◽  
Author(s):  
Abhishek Jain ◽  
Joan M. Redwing
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Temperature ◽  
Room Temperature ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Film Morphology ◽  
Buffer Layer Thickness ◽  
Aln Buffer

ABSTRACTThin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40Å) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60Å. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm2/Vs and an electron concentration of 2.1×1019 cm-3 were measured in an approximately 200 nm thick InN layer grown on sapphire.

scholarly journals Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

2021 ◽  
Vol 3 (3) ◽  
Author(s):  
Neha Aggarwal ◽  
Shibin Krishna ◽  
Lalit Goswami ◽  
Shubhendra Kumar Jain ◽  
Akhilesh Pandey ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Defect Density ◽  
Growth Parameters ◽  
Aluminium Content ◽  
Single Crystalline ◽  
Solar Blind ◽  
Aln Buffer ◽  
Growth Quality ◽  
The Impact

AbstractWe have investigated the impact of AlN buffer layer growth parameters for developing highly single crystalline AlGaN films. The low mobility of Al adatoms and high temperature for compound formation are amongst the major causes that affects the growth quality of AlGaN films. Thus, proper optimization need to be carried out for achieving high quality AlGaN due to an augmented tendency of defect generation compared to GaN films. Thus, growth conditions need to be amended to maximize the incorporation ability of adatoms and minimize defect density. So, this study elaborates the growth optimization of AlGaN/AlN/Si (111) heterostructure with varied AlN buffer growth temperature (760 to 800 °C). It was observed that the remnant Al in low temperature growth of AlN buffer layer resist the growth quality of AlGaN epitaxial films. A highly single crystalline AlGaN film with comparatively lowest rocking curve FWHM value (~ 0.61°) and smooth surface morphology with least surface defect states was witnessed when AlN buffer was grown at 780 °C. From the Vegard’s law, the photoluminescence analysis unveils Aluminium composition of 31.5% with significantly reduced defect band/NBE band ratio to 0.3. The study demonstrates good crystalline quality AlGaN film growth with Aluminium content variation between ~ 30–39% in AlGaN/AlN heterostructure on Si(111) substrate leading to a bandgap range which is suitable for next-generation solar-blind photodetection applications.

Effects of glass substrate coated by different-content buffer layer on the quality of poly-Si thin films

2016 ◽  
Vol 213 (12) ◽  
pp. 3142-3149 ◽  
Author(s):  
Mehmet Karaman ◽  
Özge Tüzün Özmen ◽  
Salar Habibpur Sedani ◽  
Engin Özkol ◽  
Raşit Turan
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Glass Substrate ◽  
Different Content

Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films

2008 ◽  
Vol 254 (21) ◽  
pp. 6766-6769 ◽  
Author(s):  
Shoubin Xue ◽  
Xing Zhang ◽  
Ru Huang ◽  
Huizhao Zhuang
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Buffer Layer
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