Dislocation density reduction limited by inclusions in kerfless high-performance multicrystalline silicon

2015 ◽  
Vol 9 (9) ◽  
pp. 503-506 ◽  
Author(s):  
Sergio Castellanos ◽  
Tonio Buonassisi
Keyword(s):  
Dislocation Density ◽  
High Performance ◽  
Multicrystalline Silicon ◽  
Density Reduction

Dislocation density reduction in multicrystalline silicon via cyclic annealing

2015 ◽  
Vol 212 (10) ◽  
pp. 2315-2321 ◽  
Author(s):  
Kwangmin Choi ◽  
Sergio Castellanos ◽  
Douglas Michael Powell ◽  
Tonio Buonassisi ◽  
Hyunjoo Choi
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Cyclic Annealing ◽  
Density Reduction

scholarly journals Dislocation Density Reduction During Impurity Gettering in Multicrystalline Silicon

2013 ◽  
Vol 3 (1) ◽  
pp. 189-198 ◽  
Author(s):  
H. J. Choi ◽  
M. I. Bertoni ◽  
J. Hofstetter ◽  
D. P. Fenning ◽  
D. M. Powell ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Density Reduction

An insight into dislocation density reduction in multicrystalline silicon

2016 ◽  
Vol 155 ◽  
pp. 88-100 ◽  
Author(s):  
Soobin Woo ◽  
Mariana Bertoni ◽  
Kwangmin Choi ◽  
Seungjin Nam ◽  
Sergio Castellanos ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Density Reduction ◽  
Insight Into

Dislocation Engineering in Multicrystalline Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 11-18 ◽  
Author(s):  
Mariana I. Bertoni ◽  
Clémence Colin ◽  
Tonio Buonassisi
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Temperature Treatment ◽  
Multicrystalline Silicon ◽  
High Temperature Treatment ◽  
Face Centered Cubic ◽  
Ambient Conditions ◽  
Density Reduction ◽  
Dislocation Movement ◽  
Dislocation Annihilation

Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

scholarly journals Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 341 ◽  
Author(s):  
Gaute Stokkan ◽  
Adolphus Song ◽  
Birgit Ryningen
Keyword(s):  
Dislocation Density ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
High Performance ◽  
Coincidence Site Lattice ◽  
Grain Structure ◽  
Multicrystalline Silicon ◽  
Initial Growth ◽  
Cluster Density ◽  
Dislocation Cluster

Wafers from three heights and two different lateral positions (corner and centre) of four industrial multicrystalline silicon ingots were analysed with respect to their grain structure and dislocation density. Three of the ingots were non-seeded and one ingot was seeded. It was found that there is a strong correlation between the ratio of the densities of (coincidence site lattice) CSL grain boundaries and high angle grain boundaries in the bottom of a block and the dislocation cluster density higher in the block. In general, the seeded blocks, both the corner and centre block, have a lower dislocation cluster density than in the non-seeded blocks, which displayed a large variation. The density of the random angle boundaries in the corner blocks of the non-seeded ingots was similar to the density in the seeded ingots, while the density in the centre blocks was lower. However, the density of CSL boundaries was higher in all the non-seeded than in the seeded ingots. It appears that both of these grain boundary densities influence the presence of dislocation clusters, and we propose they act as dislocation sinks and sources, respectively. The ability to generate small grain size material without seeding appears to be correlated to the morphology of the coating, which is generally rougher in the corner positions than in the middle. Furthermore, the density of twins and CSL boundaries depends on the growth mode during initial growth and thus on the degree of supercooling. Controlling both these properties is important in order to be able to successfully produce uniform quality high-performance multicrystalline silicon by the advantageous non-seeding method.

Stress-enhanced dislocation density reduction in multicrystalline silicon

2010 ◽  
Vol 5 (1) ◽  
pp. 28-30 ◽  
Author(s):  
M. I. Bertoni ◽  
D. M. Powell ◽  
M. L. Vogl ◽  
S. Castellanos ◽  
A. Fecych ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Multicrystalline Silicon ◽  
Density Reduction
Sign in / Sign up

Export Citation Format

Share Document