scholarly journals Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties (Phys. Status Solidi A 6/2013)

2013 ◽  
Vol 210 (6) ◽  
Author(s):  
Matthew J. Hollander ◽  
Ashish Agrawal ◽  
Michael S. Bresnehan ◽  
Michael LaBella ◽  
Kathleen A. Trumbull ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
Electrical Transport ◽  
Hexagonal Boron Nitride ◽  
Epitaxial Graphene ◽  
Heterogeneous Integration ◽  
Electrical Transport Properties ◽  
Free Standing

scholarly journals Electrical transport properties of Si-doped hexagonal boron nitride epilayers

AIP Advances ◽  
2013 ◽  
Vol 3 (12) ◽  
pp. 122116 ◽  
Author(s):  
S. Majety ◽  
T. C. Doan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
Electrical Transport ◽  
Hexagonal Boron Nitride ◽  
Electrical Transport Properties ◽  
Si Doped

Electrical transport properties of hexagonal boron nitride epilayers

2021 ◽  
pp. 393-454
Author(s):  
Samuel Grenadier ◽  
Avisek Maity ◽  
Jing Li ◽  
Jingyu Lin ◽  
Hongxing Jiang
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
Electrical Transport ◽  
Hexagonal Boron Nitride ◽  
Electrical Transport Properties

scholarly journals Size-Dependent Electrical Transport Properties in Conducting Diamond Nanostripes

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1765
Author(s):  
Andrew F. Zhou ◽  
Elluz Pacheco ◽  
Badi Zhou ◽  
Peter X. Feng
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Electrical Transport Properties ◽  
Free Standing ◽  
Size Dependent ◽  
Ultrananocrystalline Diamond ◽  
Electron Transport Properties

With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and electrochemical applications. In this paper, 100 nm thick n-type ultrananocrystalline diamond thin films were synthesized by microwave plasma-enhanced chemical vapor deposition method with 5% N2 gas in the plasma during the growth process. Then the nanostripes were fabricated using standard electron beam lithography and reactive ion etching techniques. The electrical transport properties of the free-standing single nanostripes of different widths from 75 to 150 nm and lengths from 1 to 128 μm were investigated. The study showed that the electrical resistivity of the n-type ultrananocrystalline diamond nanostripes increased dramatically with the decrease in the nanostripe width. The nanostripe resistivity was nearly doubted when the width was reduced from 150 nm to 75 nm. The size-dependent variability in conductivity could originate from the imposed diffusive scattering of the nanostripe surfaces which had a further compounding effect to reinforce the grain boundary scattering.

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

2011 ◽  
Vol 109 (2) ◽  
pp. 023716 ◽  
Author(s):  
J. Ying ◽  
X. W. Zhang ◽  
Z. G. Yin ◽  
H. R. Tan ◽  
S. G. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Transport Properties ◽  
Electrical Transport ◽  
Cubic Boron Nitride ◽  
Electrical Transport Properties ◽  
Si Doped

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

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