Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

2011 ◽  
Vol 109 (2) ◽  
pp. 023716 ◽  
Author(s):  
J. Ying ◽  
X. W. Zhang ◽  
Z. G. Yin ◽  
H. R. Tan ◽  
S. G. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Transport Properties ◽  
Electrical Transport ◽  
Cubic Boron Nitride ◽  
Electrical Transport Properties ◽  
Si Doped

scholarly journals Electrical transport properties of Si-doped hexagonal boron nitride epilayers

AIP Advances ◽  
2013 ◽  
Vol 3 (12) ◽  
pp. 122116 ◽  
Author(s):  
S. Majety ◽  
T. C. Doan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
Electrical Transport ◽  
Hexagonal Boron Nitride ◽  
Electrical Transport Properties ◽  
Si Doped

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation

2021 ◽  
pp. 100113
Author(s):  
Jyoti Yadav ◽  
Rini Singh ◽  
M.D. Anoop ◽  
Nisha Yadav ◽  
N. Srinivasa Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Shi Irradiation

Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ08
Author(s):  
Akihiro Tsuruta ◽  
Yusuke Tsujioka ◽  
Yutaka Yoshida ◽  
Ichiro Terasaki ◽  
Norimitsu Murayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Electrical Transport ◽  
Oxide Thin Films ◽  
Electrical Transport Properties

Time‐Dependent Electrical Transport Properties of Topological Insulator Cr‐Doped Bi 2 Se 3 Thin Films

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Electrical Transport ◽  
Time Dependent ◽  
Electrical Transport Properties

Growth and electrical transport properties of In2Te3 thin films

1981 ◽  
Vol 78 (4) ◽  
pp. 377-383 ◽  
Author(s):  
P.C. Mathur ◽  
Anil Kumar ◽  
O.P. Taneja ◽  
A.L. Dawar
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties
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