Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

2014 ◽  
Vol 105 (18) ◽  
pp. 183105 ◽  
Author(s):  
Cui Yu ◽  
Qingbin Liu ◽  
Jia Li ◽  
Weili Lu ◽  
Zezhao He ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Bilayer Graphene ◽  
Electrical Transport Properties ◽  
Free Standing

scholarly journals Size-Dependent Electrical Transport Properties in Conducting Diamond Nanostripes

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1765
Author(s):  
Andrew F. Zhou ◽  
Elluz Pacheco ◽  
Badi Zhou ◽  
Peter X. Feng
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Electrical Transport Properties ◽  
Free Standing ◽  
Size Dependent ◽  
Ultrananocrystalline Diamond ◽  
Electron Transport Properties

With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and electrochemical applications. In this paper, 100 nm thick n-type ultrananocrystalline diamond thin films were synthesized by microwave plasma-enhanced chemical vapor deposition method with 5% N2 gas in the plasma during the growth process. Then the nanostripes were fabricated using standard electron beam lithography and reactive ion etching techniques. The electrical transport properties of the free-standing single nanostripes of different widths from 75 to 150 nm and lengths from 1 to 128 μm were investigated. The study showed that the electrical resistivity of the n-type ultrananocrystalline diamond nanostripes increased dramatically with the decrease in the nanostripe width. The nanostripe resistivity was nearly doubted when the width was reduced from 150 nm to 75 nm. The size-dependent variability in conductivity could originate from the imposed diffusive scattering of the nanostripe surfaces which had a further compounding effect to reinforce the grain boundary scattering.

The Influence of Atmosphere on Electrical Transport Properties in Bilayer Graphene FET by CVD Methods

2012 ◽  
Vol 531-532 ◽  
pp. 383-387 ◽  
Author(s):  
Gang Peng ◽  
Xiao Yan Yu ◽  
Ying Qiu Zhou ◽  
Guang Wang ◽  
Li Wang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Room Temperature ◽  
Dirac Point ◽  
Bilayer Graphene ◽  
Water Molecules ◽  
Ambient Atmosphere ◽  
Electrical Transport Properties ◽  
Desorption Process ◽  
Graphene Fet

The desorption process for ambient atmosphere on electrical transport properties of bilayer graphene FET grown by CVD methods on SiO2/Si substrate was investigated in room temperature. With increasing the vacuum time of the device underwent, we found that the voltage of Dirac point decreased, the mobility of hole (electron) increased and the charged impurity density decreased. The results suggest that the atmospheric adsorbates (mainly oxygen and water molecules) are strongly influence the electrical transport properties of graphene FET.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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