Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4 -H2 O and TiCl4 -O3 atomic-layer-deposition processes

2013 ◽  
Vol 211 (2) ◽  
pp. 425-432 ◽  
Author(s):  
T. Arroval ◽  
L. Aarik ◽  
R. Rammula ◽  
H. Mändar ◽  
J. Aarik ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Growth Temperature ◽  
Atomic Layer ◽  
Tio2 Films ◽  
High Permittivity ◽  
Layer Deposition ◽  
Deposition Processes

Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

2011 ◽  
Vol 88 (7) ◽  
pp. 1514-1516 ◽  
Author(s):  
Boris Hudec ◽  
Kristína Hušeková ◽  
Aivar Tarre ◽  
Jeong Hwan Han ◽  
Sora Han ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Deposition Processes ◽  
Mim Capacitors

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Retention of Surface Structure Causes Lower Density in Atomic Layer Deposition of Amorphous Titanium Oxide Thin Films

2021 ◽  
Author(s):  
Benjamin Rich ◽  
Yael Etinger-Geller ◽  
G. Ciatto ◽  
A Katsman ◽  
Boaz Pokroy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Structure ◽  
Titanium Oxide ◽  
Size Effects ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Structural Modifications ◽  
Layer Deposition ◽  
Amorphous Tio2

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

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