scholarly journals Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study

2012 ◽  
Vol 209 (9) ◽  
pp. 1675-1682 ◽  
Author(s):  
Vincent Mortet ◽  
Liang Zhang ◽  
Maxie Eckert ◽  
Jan D'Haen ◽  
Ali Soltani ◽  
...  
Keyword(s):  
Grain Size ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Electrical Bias

Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study

2005 ◽  
Vol 87 (21) ◽  
pp. 212114 ◽  
Author(s):  
T. Hornos ◽  
A. Gali ◽  
R. P. Devaty ◽  
W. J. Choyke
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Characterization and Mechanism Analysis of Growth Bands in Chemical Vapor Deposited ZnS

2019 ◽  
Vol 944 ◽  
pp. 631-636
Author(s):  
Peng Fei Zhang ◽  
Hong Wei Li ◽  
Hai Yang ◽  
Nai Guang Wei ◽  
Jian Ming Li ◽  
...  
Keyword(s):  
Grain Size ◽  
Hexagonal Phase ◽  
Chemical Vapor ◽  
Crystal Nucleation ◽  
Spectrometric Method ◽  
Ir Absorption ◽  
Actual Process ◽  
Bright Band ◽  
Chemical Vapor Deposited ◽  
Growth Bands

In the chemical vapor deposited zinc sulfide, it often appears obvious light and dark growth bands along the growth direction, which will affect the homogeneity of optical properties of CVD ZnS and the efficiency of subsequent heat treatment. X-ray diffraction, Metallographic microscope and SEM were used to detect the crystal structure, grain size and microstructure, and the concentration of Zn and S in different bands was tested by EDTA titration, XRF, ICP and HF-combustion IR absorption spectrometric method. Results: Compared to the normal band, the grain size in the bright band was significantly larger, and the concentration of hexagonal phase in the bright band was lower, while the concentration ratio of Zn and S in the CVD ZnS did not have the regularity in the different bands. Combining with relevant knowledge about characteristics of the deposition process and crystal growth theory, the paper analyzes the formation mechanism of growth bands in CVD ZnS, and find that the main factor is the mutation of the concentration of the reactants in the deposition surface, affect the crystal nucleation rate and growth rate, eventually lead to the different grain morphologies, and even showing up the macroscopic growth bands. Compared with the actual process parameters, we have confirmed it and found out the main causes of mutation of the reactant concentration, this will have important guiding significance to the improvement of product quality in the future.

A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers

2006 ◽  
Vol 527-529 ◽  
pp. 605-608
Author(s):  
T. Hornos ◽  
Adam Gali ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke
Keyword(s):  
Ab Initio ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Experimental Results ◽  
Free Carriers ◽  
Chemical Potentials ◽  
Chemical Vapor Deposited

Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical vapor deposited (CVD) SiC layers. CVD conditions have been simulated by using the appropriate chemical potentials for hydrogen and phosphorus (P). We found that the most abundant defect is P at Si-site followed by P at C-site. The calculated concentrations of the P-donors and free carriers in CVD grown SiC agree with the experimental results.

The grain size dependence of the mobility and lifetime in chemical vapor deposited diamond photoconductive switches

1998 ◽  
Vol 83 (3) ◽  
pp. 1730-1733 ◽  
Author(s):  
Hitoki Yoneda ◽  
Ken-ichi Ueda ◽  
Yumi Aikawa ◽  
Kazuhiro Baba ◽  
Nobuaki Shohata
Keyword(s):  
Grain Size ◽  
Size Dependence ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Photoconductive Switches

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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