Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study

2005 ◽  
Vol 87 (21) ◽  
pp. 212114 ◽  
Author(s):  
T. Hornos ◽  
A. Gali ◽  
R. P. Devaty ◽  
W. J. Choyke
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

Ultraprecision Surface Grinding of Chemical Vapor Deposited Silicon Carbide for X-Ray Mirrors Using Resinoid-Bonded Diamond Wheels

CIRP Annals ◽  
1999 ◽  
Vol 48 (1) ◽  
pp. 277-280 ◽  
Author(s):  
Y. Namba ◽  
H. Kobayashi ◽  
H. Suzuki ◽  
K. Yamashita ◽  
N. Taniguchi
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Surface Grinding ◽  
X Ray ◽  
Chemical Vapor Deposited

scholarly journals The structure of chemical vapor deposited silicon carbide

1977 ◽  
Vol 40 ◽  
pp. 57-72 ◽  
Author(s):  
J. Chin ◽  
P.K. Gantzel ◽  
R.G. Hudson
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Hot wire chemical vapor deposited multiphase silicon carbide (SiC) thin films at various filament temperatures

2016 ◽  
Vol 27 (12) ◽  
pp. 12340-12350 ◽  
Author(s):  
Amit Pawbake ◽  
Vaishali Waman ◽  
Ravindra Waykar ◽  
Ashok Jadhavar ◽  
Ajinkya Bhorde ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Chemical Vapor Deposited

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

Application of chemical vapor deposited yttria for the protection of silicon carbide fibers in a SiC/Ni3Al composite

1990 ◽  
Vol 5 (11) ◽  
pp. 2706-2717 ◽  
Author(s):  
D. J. Larkin ◽  
L. V. Interrante ◽  
A. Bose
Keyword(s):  
Silicon Carbide ◽  
Nickel Aluminide ◽  
Chemical Vapor ◽  
Degradation Process ◽  
Auger Spectroscopy ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Chemical Vapor Deposited ◽  
Volatile Products ◽  
Before And After

A CVD process has been developed for coating Textron-Avco SCS-6 SiC fiber with yttria. Both Y(fod)3·H2O and Y(thd)3 (fod = 1,1,1,2,2,3,3-heptafluoro-7,7-dimethyl-4,6-octanedionato; thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) were examined as potential Y2O3 CVD precursors. Analysis of the deposits by Auger spectroscopy indicated significant F and C'incorporation in the case of Y(fod)3 · H2O whereas, under appropriate conditions, Y(thd)3 gave a deposit which was essentially free of C and other impurities. GCFTIR analysis of the volatile products of the CVD process indicated isobutylene, tetrafluoroethylene, 1,1-difluoroethylene, fluoroform, and fluoroethylene for Y(fod)3 · H2O and mainly isobutylene and propylene for Y(thd)3. The precursor Y(thd)3 was chosen to deposit 1–2 μm of yttria on short lengths of silicon carbide fibers. The coated fibers were then incorporated into a nickel aluminide (Ni3Al) matrix by reactive sintering, with yttria affording protection from the known SiC + 2Ni ⇉ Ni2Si + C degradation process. The SiC/Ni3Al composites, before and after annealing at 1000 °C for up to 100 h, were studied by using SEM and EMPA to determine the extent of reaction. With the exception of certain portions of the fibers that were inadequately coated with yttria, complete protection of the fibers was indicated.

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