Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer

2011 ◽  
Vol 208 (7) ◽  
pp. 1607-1610 ◽  
Author(s):  
Yoshinori Oshimura ◽  
Takayuki Sugiyama ◽  
Kenichiro Takeda ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Leakage Current ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Buffer Layer

Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride

2000 ◽  
Vol 88 (11) ◽  
pp. 6598-6604 ◽  
Author(s):  
E. Rokuta ◽  
Y. Hotta ◽  
H. Tabata ◽  
H. Kobayashi ◽  
T. Kawai
Keyword(s):  
Buffer Layer ◽  
Leakage Current ◽  
Silicon Oxynitride ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Current Characteristics

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current

2018 ◽  
Vol 44 (10) ◽  
pp. 862-864 ◽  
Author(s):  
N. A. Maleev ◽  
M. A. Bobrov ◽  
A. G. Kuzmenkov ◽  
A. P. Vasil’ev ◽  
M. M. Kulagina ◽  
...  
Keyword(s):  
Leakage Current ◽  
Low Leakage ◽  
Low Leakage Current
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