Crystallographic plane dependent Fe and Si dopant incorporation and activation in InP

2009 ◽  
Vol 206 (4) ◽  
pp. 691-696 ◽  
Author(s):  
C. Lewis Reynolds ◽  
Judith A. Grenko
Keyword(s):  
Crystallographic Plane ◽  
Dopant Incorporation

Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE

1991 ◽  
Vol 111 (1-4) ◽  
pp. 847-855 ◽  
Author(s):  
V.P. Kesan ◽  
S.S. Iyer ◽  
J.M. Cotte
Keyword(s):  
Dopant Incorporation

X-ray standing wave investigations of Si dopant incorporation in GaN

2005 ◽  
Vol 892 ◽  
Author(s):  
Michael Siebert ◽  
Th. Schmidt ◽  
J. I. Flege ◽  
J. Zegenhagen ◽  
T.-L. Lee ◽  
...  
Keyword(s):  
Dopant Concentration ◽  
Specific Data ◽  
X Ray ◽  
Site Distribution ◽  
Sapphire Substrates ◽  
Dopant Incorporation ◽  
Radiation Technique ◽  
Si Doped ◽  
Sample Structure ◽  
First Time

AbstractThe synchrotron radiation technique of x-ray standing waves (XSW), which allows to directly obtain structural and element-specific data, was successfully used for the investigation of the dopant site distribution in Si doped GaN films grown on (0001) sapphire substrates for the first time. The Si dopant concentration was chosen to 5×1018 cm-3 and 5×1019 cm-3. The measurements were performed on 300 nm thin doped films deposited on high-quality thick undoped GaN films. With this sample structure, influences of the Si dopant induced decrease of the crystalline quality on the XSW signal are suppressed. The XSW data are compared to those obtained from thick homogeneously doped GaN films. All XSW measurements were performed in (002) backscattering geometry. Independent of the dopant concentration, the results indicate that Si atoms are solely incorporated on substitutional Ga sites.

scholarly journals Auxeticity of Yukawa Systems with Nanolayers in the (111) Crystallographic Plane

Materials ◽  
2017 ◽  
Vol 10 (11) ◽  
pp. 1338 ◽  
Author(s):  
Paweł Pigłowski ◽  
Jakub Narojczyk ◽  
Artur Poźniak ◽  
Krzysztof Wojciechowski ◽  
Konstantin Tretiakov
Keyword(s):  
Crystallographic Plane

HYBRID NANOMATERIALS FOR MULTI-SPECTRAL INFRARED PHOTODETECTION

2007 ◽  
Vol 17 (01) ◽  
pp. 165-172 ◽  
Author(s):  
ADRIENNE D. STIFF-ROBERTS
Keyword(s):  
Dark Current ◽  
Room Temperature ◽  
Spectral Response ◽  
Substrate Material ◽  
Hybrid Nanomaterials ◽  
Thermally Activated ◽  
Dopant Incorporation ◽  
Quantum Dot Infrared Photodetectors ◽  
Current Voltage ◽  
Fourier Transform Ir

Quantum dot infrared photodetectors (QDIPs) using quantum dots (QDs) grown by strained-layer epitaxy have demonstrated low dark current, multi-spectral response, high operating temperature, and infrared (IR) imaging. However, achieving near room-temperature, multi-spectral operation is a challenge due to randomness in QD properties. The ability to control dopant incorporation is important since charge carrier occupation influences dark current and IR spectral response. In this work, dopant incorporation is investigated in two classes of QDs; epitaxial InAs/GaAs QDs and CdSe colloidal QDs (CQDs) embedded in MEH-PPV conducting polymers. The long-term goal of this work is to combine these hybrid nanomaterials in a single device heterostructure to enable multi-spectral IR photodetection. Two important results towards this goal are discussed. First, by temperature-dependent dark current-voltage and polarization-dependent Fourier transform IR spectroscopy measurements in InAs/GaAs QDIPs featuring different doping schemes, we have provided experimental evidence for the important contribution of thermally-activated, defect-assisted, sequential resonant tunneling. Second, the enhanced quantum confinement and electron localization in the conduction band of CdSe / MEH-PPV nanocomposites enable intraband transitions in the mid-IR at room temperature. Further, by controlling the semiconductor substrate material, doping type, and doping level on which these nanocomposites are deposited, the intraband IR response can be tuned.

p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

Nanoscale ◽  
2014 ◽  
Vol 6 (17) ◽  
pp. 9970-9976 ◽  
Author(s):  
Q. Wang ◽  
X. Liu ◽  
M. G. Kibria ◽  
S. Zhao ◽  
H. P. T. Nguyen ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Surface Charge ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Dopant Incorporation ◽  
P Type

p-Type dopant (magnesium) incorporation and surface charge properties of catalyst-free GaN nanowires are revealed by micro-Raman scattering and X-ray photoelectron spectroscopy.

Some kinetic and thermodynamic aspects of dopant incorporation in MBE grown InP and GaAs

1987 ◽  
Vol 84 (2) ◽  
pp. 241-246 ◽  
Author(s):  
V.M. Airaksinen ◽  
T.S. Cheng ◽  
C.R. Stanley
Keyword(s):  
Dopant Incorporation

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

2014 ◽  
Vol 806 ◽  
pp. 45-50 ◽  
Author(s):  
Roxana Arvinte ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
Marc Portail ◽  
Adrien Michon ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Present Contribution ◽  
Growth Pressure ◽  
Temperature Growth ◽  
Dopant Incorporation ◽  
Capacitance Voltage ◽  
Secondary Ion

In the present contribution, the trends in voluntary incorporation of aluminum in 4H-SiC homoepitaxial films are investigated. The films were grown on Si-and C-face 4H-SiC 8°off substrates by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor. Secondary Ion Mass Spectrometry (SIMS) and capacitance-voltage (C-V) measurements were used to determine the Al incorporation in the samples. The influence of Trimethylaluminum (TMA) flow rate, growth temperature, growth pressure and C/Si ratio on the dopant incorporation was studied.

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