p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

Nanoscale ◽  
2014 ◽  
Vol 6 (17) ◽  
pp. 9970-9976 ◽  
Author(s):  
Q. Wang ◽  
X. Liu ◽  
M. G. Kibria ◽  
S. Zhao ◽  
H. P. T. Nguyen ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Surface Charge ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Dopant Incorporation ◽  
P Type

p-Type dopant (magnesium) incorporation and surface charge properties of catalyst-free GaN nanowires are revealed by micro-Raman scattering and X-ray photoelectron spectroscopy.

Gold nanoclusters reductively deposited on porous silicon: morphology and electronic structures

1998 ◽  
Vol 76 (11) ◽  
pp. 1707-1716 ◽  
Author(s):  
I Coulthard ◽  
S Degen ◽  
Y -J Zhu ◽  
T K Sham
Keyword(s):  
Gold Nanoparticles ◽  
Porous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gold Nanoclusters ◽  
Gold Complex ◽  
X Ray Diffraction ◽  
Complex Ions ◽  
X Ray ◽  
Preparation Conditions ◽  
P Type

Utilizing porous silicon as a reducing agent and a substrate, gold complex ions [AuCl4]- were reduced from aqueous solution to produce nanoparticles of gold upon the surface of porous silicon. Scanning electron microscopy (SEM) was utilized to study the morphology of the porous silicon layers and the deposits of gold nanoparticles. It is found that preparation conditions have a profound effect on the morphology of the deposits, especially on porous silicon prepared from a p-type wafer. The gold nanoparticles, varying from micrometric aggregates of clusters of the order of 10 nm, to a distribution of nearly spherical clusters of the order of 10 nm, to strings of ~10 nm were observed and compared to bulk gold metal using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and X-ray absorption spectroscopy (XAS). These techniques confirm and complement the SEM findings. The potential for this reductive deposition technique is noted.Key words: gold nanostructures, reductive deposition, porous silicon, morphology, X-ray spectroscopy.

Nitrogen-Doping Induced Optical Bandgap Widening of P-Type Cu2O Flms

2009 ◽  
Vol 1217 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Shu Saeki ◽  
Takeshi Morikawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Structural Changes ◽  
Optical Bandgap ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
N Doping ◽  
Hall Effect Measurements ◽  
Optical Bandgap Energy ◽  
P Type

AbstractWe have investigated the effect of N doping into Cu2O films deposited by reactive magnetron sputtering. With increasing N-doping concentration up to 3 at.%, the optical bandgap energy is enlarged from ˜2.1 to ˜2.5 eV with retaining p-type conductivity as determined by optical absorption and Hall-effect measurements. Additionally, photoelectron spectroscopy in air measurements shows an increase in the valence and conduction band shifts with N doping. These experimental results demonstrate possible optical bandgap widening of p-type N-doped Cu2O films, which is a phenomenon that is probably associated with significant structural changes induced by N doping, as suggested from x-ray diffraction measurements.

Graphene growth on SiC and other substrates using carbon sources

2011 ◽  
Vol 1284 ◽  
Author(s):  
W. C. Mitchel ◽  
J. H. Park ◽  
Howard E. Smith ◽  
L. Grazulis ◽  
S. Mou ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Carbon Flux ◽  
Carbon Sources ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Graphene Films ◽  
Additional Control ◽  
P Type ◽  
Type Conduction

ABSTRACTDirect deposition of graphene from carbon sources on foreign substrates without the use of metal catalysts is shown to be an effective process with several advantages over other growth techniques. Carbon source molecular beam epitaxy (CMBE) in particular provides an additional control parameter in carbon flux and enables growth on substrates other than SiC, including oxidized Si and sapphire. CMBE using thermally evaporated C60 and a heated graphite filament on SiC is reported here. The graphene films were characterized by Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy and Hall effect. Graphene films on Si-face SiC grown using the C60 source have Bernal-like stacking and n-type conduction while those grown using the graphite filament have turbostratic stacking and p-type conduction. The sheet concentration for both n- and p-type doping is linearly dependent on film thickness.

Dopant induced modifications in the physical properties of sprayed ZnO:In films

1993 ◽  
Vol 8 (5) ◽  
pp. 1052-1056 ◽  
Author(s):  
D.J. Goyal ◽  
Chitra Agashe ◽  
M.G. Takwale ◽  
V.G. Bhide ◽  
Shailaja Mahamuni ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Photoelectron Spectroscopy ◽  
Crystal Orientation ◽  
Spray Pyrolysis Technique ◽  
Small Addition ◽  
X Ray ◽  
Dopant Incorporation ◽  
Indium Doping ◽  
Dopant Level ◽  
Compositional Properties

Indium-doped zinc oxide (IZO) films were prepared by the spray pyrolysis technique. The effect of gradual incorporation of indium cations on the structural, electrical, and compositional properties of IZO films was studied in detail. It was observed that even a small addition of indium modifies the preferred growth of IZO film from the [002] direction to the [101] direction. Such a modification in growth pattern is a result of more nucleating centers created by indium doping. Indium dopant improves the electrical properties of the films. The carrier concentration depends mainly on the indium dopant level while the mobility is affected by the changes in crystal orientation that take place due to addition of dopants. X-ray photoelectron spectroscopy results show that indium doping does not lead to any stoichiometric changes in the IZO films and the dopant incorporation in the film is linearly proportional to that in the solution.

scholarly journals X-ray Photoelectron Spectroscopy (XPS) Analysis of Undoped ZnO and ZnO:Er Thin Films

2015 ◽  
Vol 16 (1) ◽  
pp. 13
Author(s):  
Iwan Sugihartono ◽  
Esmar Budi ◽  
Agus Setyo Budi
Keyword(s):  
Thin Films ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
Xps Analysis ◽  
X Ray ◽  
Si Substrates ◽  
Ultrasonic Spray ◽  
P Type

Undoped ZnO and ZnO:Er  thin films were deposited on p-type Si substrates by ultrasonic spray pyrolisis (USP). Undoped and ZnO:Er thin films have been analyzed by using X-ray Photoelectron Spectroscopy (XPS). The results show that the XPS spectrum has two Er peak at ∼157 eV and ∼168 eV. The XPS Zn 2p spectrum of undoped ZnO and ZnO:Er thin films have binding energy for Zn 2p3/2 (~ 1021 eV) and Zn 2p1/2 (~1045eV) were found no shift in binding energy after the incorporation of Er. Meanwhile, after Er incorporates into ZnO, the O 1s spectrum is composed two peak of binding energy (BE) at ~530.5eV and the shoulder about 532.5 eV.Keywords: ZnO thin films, ZnO:Er, XPS, binding energy

Chromium-Nickel Alloy for the Synthesis of Carbon Nanoparticles

2020 ◽  
Vol 28 ◽  
pp. 123-129
Author(s):  
Zalim Mukhamedovich Khamdokhov ◽  
Zamir Khamidbieich Kalazhokov ◽  
Ruslan Shahbanovich Teshev ◽  
Khamidbi Hazhismelovich Kalazhokov
Keyword(s):  
Raman Scattering ◽  
Nickel Alloy ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nanoparticles ◽  
Carbon Film ◽  
Alloy Film ◽  
Electric Arc ◽  
Amorphous Carbon Film ◽  
X Ray

The methods of Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS) and Raman scattering (RS) phase transformations in an amorphous carbon film deposited by electric arc method on a chromium-nickel alloy film were investigated. The formation of nanoparticles with a linear size of ~ 6 nm in a carbon film also was presented here.

X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films

2009 ◽  
Vol 311 (8) ◽  
pp. 2341-2344 ◽  
Author(s):  
G.D. Yuan ◽  
Z.Z. Ye ◽  
J.Y. Huang ◽  
Z.P. Zhu ◽  
C.L. Perkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
Spectroscopy Study ◽  
X Ray ◽  
P Type ◽  
Co Doped
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