Raman Scattering and Photoluminescence of Mg Doped GaN Films Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
G. Popovici ◽  
G. Y. Xu ◽  
A. Botchkarev ◽  
W. Kim ◽  
H. Tang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Longitudinal Optical ◽  
Raman Shift ◽  
Longitudinal Optical Phonon ◽  
Photoluminescence Peak ◽  
Mg Doped

ABSTRACTRaman, photoluminescence, and Hall measurements are reported for Mg doped GaN films grown by molecular beam epitaxy. The compressive and tensile stress determined by the Raman shift of the phonon lines is due to the growth conditions rather than the presence of Mg in the film. The photoluminescence peak of near band-to-band transitions is also shifted to larger (smaller) energies by the compressive (tensile) stress. The study of the longitudinal optical phonon of the Ai branch shows that its Raman line shape is affected not only by phonon-plasmon interactions but by the crystalline quality of the film, as well.

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Stimmer ◽  
A. Reittinger ◽  
G. Abstreiter ◽  
H. Holzbrecher ◽  
Ch. Buchal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Systematic Study ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Conditions ◽  
Light Emitting ◽  
Doped Silicon

AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

A Study of Low-Temperature Grown Gap by Gas-Source Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
W. G. Bi ◽  
X. B. Mei ◽  
K. L. Kavanagh ◽  
C. W. Tu ◽  
E. A. Stach ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Cross Sectional ◽  
Rocking Curve ◽  
Gas Source ◽  
Transmission Electron ◽  
Lt Gaas

AbstractWe report the effects of growth conditions on the strain and crystalline quality of lowtemperature (LT) grown GaP films by gas-source molecular beam epitaxy. At temperatures below 160 °C, poly-crystalline GaP films are always obtained, regardless of the PH3 low rate used, while at temperatures above 160 °C, the material quality is affected by the PH3 flow rate. Contrary to compressively strained LT GaAs, high-resolution X-ray rocking curve measurement indicates a tensile strain of the LT GaP films, which is considered to be due to PGa antisite defects. The strain is found to be affected by the PH3 flow rate, the growth temperature, and post-growth annealing. Contrary to LT GaAs, no P precipitates are observed in cross-sectional transmission electron microscopy.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

scholarly journals Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

2016 ◽  
Vol 119 (24) ◽  
pp. 245702 ◽  
Author(s):  
Akira Uedono ◽  
Marco Malinverni ◽  
Denis Martin ◽  
Hironori Okumura ◽  
Shoji Ishibashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Mg Doped

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

2004 ◽  
Vol 84 (6) ◽  
pp. 897-899 ◽  
Author(s):  
R. Cuscó ◽  
L. Artús ◽  
D. Pastor ◽  
F. B. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped
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